云南高校图书馆联盟文献共享服务平台- LDMOS

LDMOS: 作品数：423被引量：340H指数：7; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：李肇基张波乔明孙伟锋方健更多>>; 相关机构：电子科技大学东南大学上海华虹宏力半导体制造有限公司西安电子科技大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家高技术研究发展计划国家重点基础研究发展计划中国博士后科学基金更多>>

Review of the SiC LDMOS power device: 《Journal of Semiconductors》2024年第8期4-17,共14页Ziwei Hu Jiafei Yao Ang Li Qi Sun Man Li Kemeng Yang Jun Zhang Jing Chen Maolin Zhang Yufeng Guo; supported by the National Natural Science Foundation of China(Grant No.62074080);the Natural Science Foundation of Jiangsu Province(Grant Nos.BK20211104 and BK20201206);the Jiangsu Provincial Key Research and Development Program(Grant No.BE2022126).; Silicon carbide(SiC),as a third-generation semiconductor material,possesses exceptional material properties that significantly enhance the performance of power devices.The SiC lateral double-diffused metal–oxide–sem...; 关键词：SIC LDMOS specific on-resistance breakdown voltage

A deep trench super-junction LDMOS with double charge compensation layer被引量：2: 《Journal of Semiconductors》2022年第10期103-108,共6页Lijuan Wu Shaolian Su Xing Chen Jinsheng Zeng Haifeng Wu; A deep trench super-junction LDMOS with double charge compensation layer(DC DT SJ LDMOS)is proposed in this paper.Due to the capacitance effect of the deep trench which is known as silicon-insulator-silicon(SIS)capaci...; 关键词：double charge compensation layer super-junction deep trench SIS capacitance

Ultralow specific ON-resistance high-k LDMOS with vertical field plate被引量：2: 《Journal of Semiconductors》2018年第10期53-57,共5页Lijuan Wu Limin Hu Lin Zhu Hang Yang Bing Lei Haiqing Xie; Project supported by the National Natural Science Foundtion of China(No.61404011);the Research and Innovation Project of Graduate Students of Changsha University of Science&Technology(No.CX2017SS25);the Scientific Research Fund of Hunan Provincial Education Department(No.15C0034);the Introduction of Talents Project of Changsha University of Science Technology(No.1198023); An ultralow specific on-resistance high-k LDMOS with vertical field plate（VFP HK LDMOS） is proposed. The high-k dielectric trench and highly doped interface N＋ layer are made in bulk silicon to reduce the surface f...; 关键词：high-k dielectric vertical field plate high voltage specific on-resistance polarized charges

An LDMOS with large SOA and low specific on-resistance: 《Journal of Semiconductors》2016年第5期52-55,共4页杜文芳吕信江陈星弼; Project supported in part by the National Natural Science Foundation of China(No.51237001); An LDMOS with nearly rectangular-shape safe operation area （SOA） and low specific on-resistance is proposed. By utilizing a split gate, an electron accumulation layer is formed near the surface of the n-drift region...; 关键词：LDMOS safe operation area （SOA） snap-back split gate

Design of high reliability RF-LDMOS by suppressing the parasitic bipolar effect using enhanced p-well and double epitaxy被引量：2: 《Journal of Semiconductors》2015年第6期93-98,共6页徐向明黄景丰遇寒钱文生周正良韩波王勇王鹏飞张卫; Project supported by the Chinese National Key Project(No.2012ZX02502); A laterally diffused metal-oxide-semiconductor （LDMOS） device design with an enhanced p-well and double p-epitaxial structure is investigated for device ruggedness improvement while keeping its high device per- form...; 关键词：RF power LDMOS semiconductor device RUGGEDNESS reliability

A novel high figure-of-merit SOI SJ LDMOS with ultra-strong charge accumulation effect: 《Journal of Semiconductors》2015年第3期79-84,共6页田瑞超罗小蓉周坤徐青魏杰张波李肇基; Project supported by the National Natural Science Foundation of China(Nos.61176069,61376079);the Program for New Century Excellent Talents in University of Ministry of Education of China(No.NCET-11-0062); A novel silicon-on-insulator（SOI） super-junction（SJ） LDMOS with an ultra-strong charge accumulation effect is proposed. It has two key features： an assisted-accumulation trench-type extending gate（TEG） with a h...; 关键词：charge accumulation effect super junction breakdown voltage specific on-resistance

Investigation of the trigger voltage walk-in effect in LDMOS for high-voltage ESD protection: 《Journal of Semiconductors》2014年第9期56-59,共4页梁海莲董树荣顾晓峰钟雷吴健于宗光; Project supported by the National Natural Science Foundation of China(Nos.61171038,61150110485);the Natural Science Foundation of Jiangsu Province(No.BK20130156);the Fundamental Research Funds for the Central Universities(Nos.JUSRP51323B,JUDCF13032);the Summit of the Six Top Talents Program of Jiangsu Province(Nos.DZXX-053 and DZXX-027);the Graduate Student Innovation Program for Universities of Jiangsu Province(No.CXLX13_747); The trigger voltage walkin effect has been investigated by designing two different laterally diffused metal-oxide-semiconductor （LDMOS） transistors with an embedded silicon controlled rectifier （SCR）. By inserting...; 关键词：electrostatic discharge laterally diffused metal-oxide-semiconductor silicon control rectifier triggervoltage walk-in effect

A novel NLDMOS with a high ballast resistance for ESD protection: 《Journal of Semiconductors》2014年第2期47-50,共4页樊航张波; Project supported by the Important National S&T Special Project of China(No.2010ZX02201-003-002); To prevent the non-uniform conduction phenomenon caused by the Kirk effect in an NLDMOS under ESD stress, a novel NLDMOS structure is proposed. High electron injection current is the base of Kirk effect. Higher electr...; 关键词：electro-static discharge ballast resistance LDMOS

A high voltage Bi-CMOS compatible buffer super-junction LDMOS with an N-type buried layer被引量：1: 《Journal of Semiconductors》2014年第1期65-69,共5页伍伟张波方健罗小蓉李肇基; supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China(No.2010ZX02201);the National Natural Science Foundation of China(No.61176069);the National Defense Pre-Research of China(No.51308020304); A novel buffer super-junction （S J） lateral double-diffused MOSFET （LDMOS） with an N-type buried layer （NB） is proposed. An N- buffer layer is implemented under the SJ region and an N-type layer is buried in the...; 关键词：N-type buried layer breakdown voltage electric field modulation lateral double-diffusion MOSFET super-junction

Research and optimization of the ESD response characteristic in a ps-LDMOS transistor: 《Journal of Semiconductors》2014年第1期70-73,共4页王昊刘斯扬孙伟锋黄婷婷; supported by the National Natural Science Foundation of China(No.61204083);the Natural Science Foundation of Jiangsu Province(Nos.BK2011059,BY2011146);the Scientific Research Foundation of the Graduate School of Southeast University(No.YBJJ1311);the Scientific Research Guidance Foundation of Southeast University Wuxi Branch Campus; The ESD response characteristic in a p-type symmetric lateral DMOS （ps-LDMOS） has been investigated. The experimental results show that the ps-LDMOS has weak ESD robustness due to an absence of the ＂snapback＂ char...; 关键词：ESD response characteristic ESD robustness ps-LDMOS p-LDD

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