云南高校图书馆联盟文献共享服务平台- MBE

MBE: 作品数：367被引量：417H指数：8; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：曾一平丁召孔梅影何力李晋闽更多>>; 相关机构：中国科学院贵州大学清华大学华北光电技术研究所更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划博士科研启动基金贵州省科学技术基金更多>>

Development of in situ characterization techniques in molecular beam epitaxy被引量：1: 《Journal of Semiconductors》2024年第3期9-32,共24页Chao Shen Wenkang Zhan Manyang Li Zhenyu Sun Jian Tang Zhaofeng Wu Chi Xu Bo Xu Chao Zhao Zhanguo Wang; supported by the National Key R&D Program of China(Grant No.2021YFB2206503);National Natural Science Foundation of China(Grant No.62274159);CAS Project for Young Scientists in Basic Research(Grant No.YSBR-056);the“Strategic Priority Research Program”of the Chinese Academy of Sciences(Grant No.XDB43010102).; Ex situ characterization techniques in molecular beam epitaxy(MBE)have inherent limitations,such as being prone to sample contamination and unstable surfaces during sample transfer from the MBE chamber.In recent years...; 关键词：epitaxial growth thin film in situ characterization molecular beam epitaxy(MBE)

Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy: 《Journal of Semiconductors》2022年第12期32-38,共7页Tieshi Wei Xuefei Li Zhiyun Li Wenxian Yang Yuanyuan Wu Zhiwei Xing Shulong Lu; supported in part by the National Key R&D Program(Grant No.2018YFB2003305);the National Natural Science Foundation of China(Grant Nos.61774165,61704186,and 61827823);the program from SINANO(Y8AAQ11003 and Y4JAQ21005)。; The atomic structure and surface chemistry of GaP/Si(100)heterostructure with different pre-layers grown by molecu-lar beam epitaxy are studied.It is found that GaP epilayer with Ga-riched pre-layers on Si(100)substra...; 关键词：XPS interfacial dynamics GaP/Si(100)heterostructure MBE

Influence of self-heating on the millimeter-wave and terahertz performance of MBE grown silicon IMPATT diodes: 《Journal of Semiconductors》2020年第3期13-22,共10页S.J.Mukhopadhyay Prajukta Mukherjee Aritra Acharyya Monojit Mitra; The influence of self-heating on the millimeter-wave(mm-wave)and terahertz(THz)performance of double-drift region(DDR)impact avalanche transit time(IMPATT)sources based on silicon(Si)has been investigated in this pape...; 关键词：IMPATT oscillators linear temperature coefficient SELF-HEATING thermal runway quadratic temperature coefficient

β-Ga_2O_3 thin film grown on sapphire substrate by plasmaassisted molecular beam epitaxy被引量：5: 《Journal of Semiconductors》2019年第1期71-75,共5页Jiaqi Wei Kumsong Kim Fang Liu Ping Wang Xiantong Zheng Zhaoying Chen Ding Wang Ali Imran Xin Rong Xuelin Yang Fujun Xu Jing Yang Bo Shen Xinqiang Wang; supported by the National Key R&D Program of China(No.2018YFB0406502);the National Natural Science Foundation of China(Nos.61734001,61521004); Monoclinic gallium oxide(Ga_2O_3) has been grown on(0001) sapphire(Al_2O_3) substrate by plasma-assisted molecular beam epitaxy(PA-MBE). The epitaxial relationship has been confirmed to be [010]( 2ˉ01) β-Ga_2O_3||[ ...; 关键词：β-Ga2O3 SAPPHIRE SUBSTRATE PA-MBE CRYSTALLINE quality CL measurement

The influence of MBE and device structure on the electrical properties of GaAs HEMT biosensors: 《Journal of Semiconductors》2018年第12期95-98,共4页Jiaming Luo Min Guan Yang Zhang Liqiang Chen Yiping Zeng; Project supported by the National Key Research and Development Program of China(No.2017YFB0405400);the Open Research Fund Program of the State Key Laboratory of Virology of China(No.2017IOV002);the National Natural Science Foundation of China(Nos.61274049,61404130,61574140);the Shenzhen Science and Technology Innovation Commission(No.JSGG20160608100922614); High electron mobility transistors(HEMT) have the potential to be used as high-sensitivity and realtime biosensors. HEMT biosensors have great market prospects. For the application of HEMT biosensors, the electric pro...; 关键词：GaAs HEMT BIOSENSOR electrical properties

Kinetic process of nitridation on the α-sapphire surface: 《Journal of Semiconductors》2014年第11期184-187,共4页汤星舟李书平康俊勇陈佳琪; We established a model to simulate the growth process of nitridation and clarified the inner mechanisms ofnitridation and over-nitridation by combining the kinetic Monte Carlo and molecular dynamics methods. Supported...; 关键词：NITRIDATION kinetic Monte Carlo （KMC） molecular dynamics （MD） molecular beam epitaxy （MBE） reflection high-energy electron diffraction （RHEED）

Effects of growth temperature on high-quality In_(0.2)Ga_(0.8)N layers by plasma-assisted molecular beam epitaxy: 《Journal of Semiconductors》2012年第10期21-24,共4页张东炎郑新和李雪飞吴渊渊王建峰杨辉; supported by the SONY-SINANO Joint Project(No.Yl AAQ11001);the Suzhou Solar Cell Research Project(No.ZXJ0903);the Ministry of Science and Technology of China(No.2010DFA22770); High-quality InGaN epilayers were grown on a GaN template at temperatures of 520 and 580℃via plasma-assisted molecular beam epitaxy.The X-ray rocking curve full widths at half maximum(FWHM) of(10.2) reflections is 93...; 关键词：INGAN PA-MBE quality solar cells

Fabrication of ZnO nanowall-network ultraviolet photodetector on Si substrates被引量：4: 《Journal of Semiconductors》2011年第7期49-51,共3页宿世臣杨孝东胡灿栋; Project supported by the Grow Seedlings Project of Guangdong Province,China(No.LYM 10063); ZnO nanowall networks were prepared by plasma-assisted molecular beam epitaxy without a catalyst on Si（111） substrates.The nanostructures have preferred orientation along the c axis.The nanostructures are about 10 t...; 关键词：ZNO DETECTOR MBE

Surface reconstructions and reflection high-energy electron diffraction intensity oscillations during homoepitaxial growth on nonmisoriented GaAs(111)B by MBE被引量：1: 《Journal of Semiconductors》2010年第11期1-4,共4页杨瑞霞武一宾牛晨亮杨帆; Project supported by the National Natural Science Foundation of China(No.61076004);the Natural Science Foundation of Hebei Province,China(No.E2009000050); The growth by molecular beam epitaxy of high quality GaAs epilayers on nonmisoriented GaAs（111）B substrates is reported.Growth control of the GaAs epilayers is achieved via in situ,real time measurement of the specu...; 关键词：GaAs（111）B RHEED surface reconstruction EPILAYER

微区中MBE共度生长SiGe/Si异质结构的应变和退火效应: 《Journal of Semiconductors》2007年第8期1226-1231,共6页杨鸿斌樊永良张翔九; 国家自然科学基金资助项目(批准号:60376012)~~; 报道了在Si衬底上微米尺寸的介质膜窗口中,采用分子束外延技术共度生长的Si0.8Ge0.2薄膜的应变及其退火特性.实验表明,微区生长材料的这些特性,与同一衬底上无边界约束条件下生长的材料相比,有明显的不同.微米尺寸窗口中生长的SiGe/Si...; 关键词：SIGE 应变位错分子束外延

MBE