MOSFETS

作品数：162被引量：120H指数：5
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相关机构：西安电子科技大学北京大学中国科学院微电子研究所清华大学更多>>
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High-Mobility P-Type MOSFETs with Integrated Strained-Si_(0.73)Ge_(0.27) Channels and High-κ/Metal Gates
《Chinese Physics Letters》2016年第11期127-130,共4页毛淑娟 朱正勇 王桂磊 朱慧珑 李俊峰 赵超 
Supported by the National Basic Research Program of China under Grant No 2011CBA00605;the National Natural Science Foundation of China under Grant No 61404165
Strained-Si0.73Ge0.27 channels are successfully integrated with high-R/metal gates in p-type metai-oxide- semi- conductor field effect transistors （pMOSFETs） using the replacement post-gate process. A silicon cap an...
关键词：with is Channels and High Metal Gates High-Mobility P-Type MOSFETs with Integrated Strained-Si Ge of in 
Effect of the Si-doped In_(0.49)Ga_(0.51)P barrier layer on the device performance of In_(0.4)Ga_(0.6)As MOSFETs grown on semi-insulating GaAs substrates被引量：1
《Chinese Physics B》2013年第7期463-466,共4页常虎东 孙兵 薛百清 刘桂明 赵威 王盛凯 刘洪刚 
the National Basic Research Program of China(Grant Nos.2011CBA00605 and 2010CB327501);the National Natural Science Foundation of China(Grant No.61106095);the National Science and Technology Major Project of the Ministry of Science and Technology of China(Grant No.2011ZX02708-003)
In0.4Ga0.6As channel metal-oxide-semiconductor field-effect transistors （MOSFETs） with and without an Si-doped In0.49Ga0.51P barrier layer grown on semi-insulating GaAs substrates have been investigated for the firs...
关键词：metal–oxide–semiconductor field-effect transistor INGAAS INGAP Al2O3 
An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator
《Journal of Zhejiang University-Science C(Computers and Electronics)》2013年第3期205-213,共9页Li-heng LOU Ling-ling SUN Jun LIU Hai-jun GAO 
Project supported by the National Basic Research Program (973) of China (No. 2010CB327403);the National Natural Science Foundation of China (Nos. 61001066 and 61102027)
This paper proposes an efficient PSP-based model for cross-coupled metal-oxide-semiconductor field-effect transistors(MOSFETs) with optimized layout in the voltage controlled oscillator(VCO).The model employs a PSP ch...
关键词：Layout optimizing Modeling PSP Charge model Cross-coupled Metal-oxide-semiconductor(MOS) Voltage controlled oscillator(VCO) 
Effect of interface roughness on the carrier transport in germanium MOSFETs investigated by Monte Carlo method被引量：1
《Chinese Physics B》2010年第5期536-541,共6页杜刚 刘晓彦 夏志良 杨竞峰 韩汝琦 
Project supported by the National Natural Science Foundation of China (Grant No. 60606013);the National Basic Research Program of China (Grant No. 2006CB302705)
Interface roughness strongly influences the performance of germanium metal-organic-semiconductor field effect transistors （MOSFETs）. In this paper, a 2D full-band Monte Carlo simulator is used to study the impact of...
关键词：carrier transport interface scattering germanium MOSFETs Monte Carlo 
Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs
《Chinese Physics Letters》2010年第5期196-199,共4页邓惠雄 姜向伟 唐黎明 
Supported by the National Basic Research Program of China under Grant No G2009CB929300, and the National Natural Science Foundation of China under Grant Nos 60521001 and 60776061.
Using self-consistent calculations of million-atom SchrSdinger-Poisson equations, we investigate the I-V characteristics of tunnelling and ballistic transport of nanometer metal oxide semiconductor field effect transi...
Study of Electron Mobility in 4H-SiC Buried-Channel MOSFETs
《Journal of Semiconductors》2006年第2期283-289,共7页郜锦侠 张义门 张玉明 
国家重点基础研究发展计划资助项目(批准号:2002CB311904)~~
The effects of several factors on mobility in 4H-SiC buried-channel （BC） MOSFETs are studied,A simple model that gives a quantitative analysis of series resistance effects on the effective mobility and field-effect ...
关键词：4H-SIC buried-channel MOSFET MOBILITY series resistance interface states 
Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology被引量：1
《Journal of Semiconductors》2003年第6期592-597,共6页何平 江波 林曦 刘理天 田立林 李志坚 董业明 陈猛 王曦 
国家自然科学基金 (批准号 :5 9995 5 5 0 -1);国家重点基础研究专项经费 (编号 :G2 0 0 0 0 365 0 1)资助项目~~
To overcome the floating-body effect and self-heating effect of SOI devices,the drain and source on insulator (DSOI) structure is fabricated and tested.The low dose developed recently and low energy local SIMOX techno...
关键词：SIMOX MOS devices silicon on insulator technology floating-body effect 
Gate Current for MOSFETs with High k Dielectric Materials被引量：2
《Journal of Semiconductors》2002年第10期1009-1013,共5页刘晓彦 康晋锋 韩汝琦 
国家重点基础研究专项经费资助项目 (No .G2 0 0 0 0 36 5 0 0 )~~
The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed.The model includes both the inversion layer quantization effect with...
关键词：MOSFET direct tunneling gate current high k gate dielectric 
Characterization of Sub-100nm MOSFETs with High K Gate Dielectric
《Journal of Semiconductors》2001年第9期1107-1111,共5页朱晖文 刘晓彦 沈超 康晋锋 韩汝琦 
国家重点基础研究专项经费资助项目~~
The short-channel performance of typical 70nm MOSFETs with high K gate dielectric is widely studied by using a two dimensional(2-D) device simulator.The short-channel performance is degraded from the fringing field a...
关键词：high K materials gate dielectrics MOSFET 
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