国家自然科学基金(BK2008019)

作品数：11被引量：9H指数：2
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Effect of the V/Ⅲ ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer被引量：2
《Science China(Physics,Mechanics & Astronomy)》2013年第9期1694-1698,共5页CHAI XuZhao ZHANG Yun LIU Bin XIE ZiLi HAN Ping YE JianDong HU LiQun XIU XiangQian ZHANG Rong ZHENG YouDou 
supported by the Special Funds for Major State Basic Research Project (Grant Nos.2011CB301900,2012CB619304,and 2012CB619200);the Hi-tech Research Project (Grant No.2011AA03A103);the National Natural Science Foundation of China (Grant Nos.60990311,60820106003,60906025,60936004,and 61176063);the Natural Science Foundation of Jiangsu Province (Grant Nos.BK2008019,BK2011010,BK2010385,BK2009255,and BK2010178);the Program Granted for Scientific Innovation Research of College Graduate in Jiangsu Province (Grant No.CXLX12_0049);the Research Funds from NJU-Yangzhou Institute of Opto-electronics;a project funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions
Effect of the V/III ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer has been studied by means of photoluminescence spectroscopy and high resolution X-ray diffraction.It is ...
关键词：yellow luminescence blue luminescence V/Ⅲ ratio 
The enhancement of light-emitting efficiency using GaN-based multiple quantum well light-emitting diodes with nanopillar arrays
《Chinese Physics B》2013年第8期679-682,共4页万图图 叶展圻 陶涛 谢自力 张荣 刘斌 修向前 李毅 韩平 施毅 郑有炓 
supported by the Special Funds for Major State Basic Research Project of China(Grant No.2011CB301900);the High Technology Research Program of China(Grant No.2009AA03A198);the National Natural Science Foundation of China(Grant Nos.60990311,60721063,60906025,60936004,60731160628,and 60820106003);the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK2008019,BK2010385,BK2009255,and BK2010178);the Research Funds from Nanjing University Yangzhou Institute of Opto-electronics,China
The quest for higher modulation speed and lower energy consumption has inevitably promoted the rapid development of semiconductor-based solid lighting devices in recent years. GaN-based light-emitting diodes （LEDs） ...
关键词：nanopillar arrays INGAN/GAN multiple quantum wells quantum efficiency 
Simulation of a new style vertical HVPE system被引量：1
《Science China(Physics,Mechanics & Astronomy)》2012年第12期2434-2438,共5页ZHOU An XIU XiangQian ZHANG Rong XIE ZiLi LIU Bin HAN Ping GU ShuLin SHI Yi ZHENG YouDou 
supported by the National Basic Research Program of China(Grant No.2011CB301900);the National Natural Science Foundation of China(Grant Nos.60990311,60820106003,60906025 and 60936004);the Natural Science Foundation of Jiangsu Province(Grant Nos. BK2008019,BK2010385,BK2009255 and BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics
In this paper,we simulate a new style vertical HVPE reactor by using computational fluid dynamics program FLUENT.In order to find the best parameter on the growth rate of Gallium nitride(GaN),we change the distance be...
关键词：GAN HVPE numerical simulation 
In-Plane Optical Anisotropy of a-Plane GaN Film on r-Plane Sapphire Grown by Metal Organic Chemical vapour Deposition
《Chinese Physics Letters》2012年第10期217-220,共4页DING Yu LIU Bin TAO Tao LI Yi ZHANG Zhao ZHANG Rong XIE Zi-Li ZHAO Hong GU Shu-Lin LV Peng ZHU Shi-Ning ZHENG You-Dou 
Supported by the National Basic Research Program of China under Grant Nos 2011CB301900,2012CB619304;the National High-Technology Research and Development Program of China under Grant No 2011AA03A103;the National Natural Science Foundation of China(60990311,60820106003,60906025,60936004,61176063);the Natural Science Foundation of Jiangsu Province(BK2008019,BK2011010,BK2010385,BK2009255,BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics.
The in-plane optical anisotropic properties of the non-polar a-plane GaN films grown by metal organic chemical vapour deposition are investigated by using polarised photoluminescence(PL),optical transmission and Raman...
关键词：SCATTERING VAPOUR ANISOTROPIC 
Influence of Dry Etching Damage on the Internal Quantum Efficiency of Nanorod InGaN/GaN Multiple Quantum Wells
《Chinese Physics Letters》2012年第7期276-279,共4页YU Zhi-Guo CHEN Peng YANG Guo-Feng LIU Bin XIE Zi-Li XIU Xiang-Qian WU Zhen-Long XU Feng XU Zhou HUA Xue-Mei HAN Ping SHI Yi ZHANG Rong ZHENG You-Dou 
Supported by the National Basic Research Program of China under Grant No 2011CB301900;the National Natural Science Foundation of China(61176063,60990311,60820106003,60906025,60936004);The Natural Science Foundation of Jiangsu Province(BK2008019,BK2010385,BK2009255,BK2010178);the Research Funds from NJU-Yangzhou Institute of Optoelectronics.
The influence of dry etching damage on the internal quantum efficiency of InGaN/GaN nanorod multiple quantum wells (MQWs) is studied.The samples were etched by inductively coupled plasma (ICP) etching via a selfassemb...
关键词：INGAN/GAN MEASUREMENT EFFICIENCY 
A model for thermal annealing on forming In—N clusters in InGaNP
《Science China(Physics,Mechanics & Astronomy)》2012年第5期798-801,共4页ZHAO ChuanZhen CHEN Lei LI NaNa ZHANG HuanHuan CHEN YaFei WEI Tong TANG ChunXiao XIE ZiLi 
supported by the Special Funds for the Major State Basic Research Project (Grant No.2011CB301900);the National Natural Science Foundation of China (Grant Nos.60990311,60820106003,60906025,60936004 and 61177078);the Natural Science Foundation of Jiangsu Province (Grant Nos.BK2008019,BK2010385,BK2009255 and BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics
We develop a model for the effect of thermal annealing on forming In--N dusters in GalnNP according to thermodynamics. The average energy variation for forming an In--N bond in the model is estimated according to the ...
关键词：InGaNP ANNEALING In--N clusters THERMODYNAMICS 
Effects of V/III ratio on the growth of a-plane GaN films
《Chinese Physics B》2011年第10期368-372,共5页谢自力 李弋 刘斌 张荣 修向前 陈鹏 郑有炓 
supported by the Special Funds for Major State Basic Research Project of China (Grant No. 2011CB301900);High Technology Research Program of China (Grant No. 2009AA03A198);the National Natural Science Foundation of China (Grant Nos. 60990311, 60721063, 60906025, 60936004, 60731160628, and 60820106003);the Natural Science Foundation of Jiangsu Province of China (Grant Nos. BK2008019, BK2010385, BK2009255, and BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics, China
The non-polar a-plane GaN is grown on an r-plane sapphire substrate directly without a buffer layer by metal- organic chemical vapour deposition and the effects of V/III ratio growth conditions are investigated. Atomi...
关键词：V/III ratio a-plane GaN NON-POLAR metal-organic chemical vapour deposition 
Influence of Fluorine on the Conductivity and Oxidation of Silicon Nanomembranes after Hydrofluoric Acid Treatment
《Chinese Physics Letters》2011年第8期274-276,共3页ZHAO Xiang-Fu HAN Ping ZHANG Rong ZHENG You-Dou 
by the National Basic Research Program of China under Grant No 2011CB301900;the National Natural Science Foundation of China under Grant Nos 60990311,60820106003 and 60906025;the Natural Science Foundation of Jiangsu Province(BK2008019);China Scholarship Council(CSC).
After immersion in hydrofluoric acid,the sheet resistance of a 220-nm-thick silicon nanomembrane,measured in dry air by van der Pauw method,drops around two orders of magnitude initially,then increases and reaches the...
关键词：RESISTANCE CONDUCTIVITY OXIDATION 
Growth and Properties of Blue and Amber Complex Light Emitting InGaN/GaN Multi-Quantum Wells
《Chinese Physics Letters》2011年第8期247-249,共3页XIE Zi-Li ZHANG Rong LIU Bin XIU Xiang-Qian SU Hui LI Yi HUA Xue-Mei ZHAO Hong CHEN Peng HAN Ping SHI Yi ZHENG You-Dou 
by the National Basic Research Program of China under Grant No 2011CB301900;the National High-Technology Research and Development Program of China under Grant No 2009AA03A198;the National Natural Science Foundation of China under Grant Nos 60721063,60676057,60731160628,60820106003,60990311 and 60906025;the Natural Science Foundation of Jiangsu Province(BK2008019,BK2009255);the Research Funds from NJU-Yangzhou Institute of Opto-electronics.
Blue-red complex light emitting InGaN/GaN multi-quantum well(MQW)structures are fabricated by metal organic chemical vapor deposition(MOCVD).The structures are grown on a 2-inch diameter(0001)oriented(c−face)sapphire ...
关键词：INGAN/GAN SAPPHIRE QUANTUM 
Structural properties of GaN(0001) epitaxial layers revealed by high resolution X-ray diffraction被引量：3
《Science China(Physics,Mechanics & Astronomy)》2010年第1期68-71,共4页XIE ZiLi 1,2,3, ZHOU YuanJun 1 , SONG LiHong 1,2 , LIU Bin 1 , HUA XueMei 1,2 , Xiu XiangQian 1 , ZHANG Rong 1,2,3 & ZHENG YouDou 1,2,3 1 JiangSu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, Nanjing University, Nanjing 210093, China 2 Nanjing National Laboratory of Microstructures, Nanjing 210093, China 3 NJU-Yangzhou Institute of Opto-electronics, Yangzhou, 225001, China 
Supported by the Special Funds for Major State Basic Research Project(Grant No. 2006CB6049);the Hi-tech Research Project (Grant Nos.2006AA03A118 and 2006AA03A142);the National Natural Science Foundation of China (Grant Nos. 60721063, 60676057, 60731160628, 60710085,60820106003, and 60990311);the Natural Science Foundation of Jiangsu province (Grant No. BK2008019);the Research Funds from the NJU-Yangzhou Institute of Opto-electronics
High-resolution X-ray diffraction has been used to analyze GaN(0001) epitaxial layers on sapphire substrates. Several structural properties of GaN, including the lattice constants, strains, and dislocation densities a...
关键词：GAN XRD DISLOCATION EPITAXIAL 
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