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国家自然科学基金(60736033): 作品数：89被引量：106H指数：5; 导出分析报告; 相关作者：郝跃张进城王冲冯倩马晓华更多>>; 相关机构：西安电子科技大学教育部北京大学中国科学院微电子研究所更多>>; 相关期刊：《西安电子科技大学学报》《Journal of Semiconductors》《Science China(Information Sciences)》《中国科学：技术科学》更多>>; 相关主题：ALGAN/GANGANHIGH_ELECTRON_MOBILITY_TRANSISTORSMOCVDA1GAN/GAN更多>>; 相关领域：电子电信理学化学工程一般工业技术更多>>

Oxidation-based wet-etching method for Al Ga N/Ga N structure with different oxidation times and temperatures: 《Rare Metals》2015年第1期1-5,共5页Yang Liu Jin-Yan Wang Zhe Xu Jin-Bao Cai Mao-Jun Wang Min Yu Bing Xie Wen-Gang; financially supported by the National Natural Science Foundation of China (Nos. 60406004, 60890193, and 60736033);the National Key Micrometer/Nanometer Processing Laboratory; In this article, a detailed analysis of the wet- etching technique for AIGaN/GaN heterostructure using dry thermal oxidation followed by a wet alkali etching was performed. The experimental results show that the oxida...; 关键词：Wet-etching AIGAN/GAN Atomic forcemicroscopy Rapid thermal annealing

Pulsed metal organic chemical vapor deposition of InAlN-based heterostructures and its application in electronic devices被引量：3: 《Chinese Science Bulletin》2014年第12期1228-1234,共7页Yue Hao Junshuai Xue Jincheng Zhang; supported by the National Natural Science Foundation of China(60736033 and 60676048); As a promising group III-nitride semiconductor material,InAlN ternary alloy has been attracted increasing interest and widespread research efforts for optoelectronic and electronic applications in the last 5 years.Fol...; 关键词：化学气相沉积电子应用电子器件异质结构有机金属脉冲高电子迁移率晶体管西安电子科技大学

Analysis of AlGaN/GaN high electron mobility transistors failure mechanism under semi-on DC stress: 《Journal of Semiconductors》2014年第1期56-60,共5页杨振王金延徐哲李晓平张波王茂俊于民张进城马晓华李用兵; supported by the National Natural Science Foundation of China(Nos.60406004,60890193,60736033);the National Key Micrometer/Nanometer Processing Lab; Semi-on DC stress experiments were conducted on A1GaN/GaN high electron mobility transistors （HEMTs） to find the degradation mechanisms during stress. A positive shift in threshold voltage （VT） and an increase in ...; 关键词：A1GaN/GaN HEMT reliability semi-on DC stress hot electron effect

A novel oxidation-based wet etching method for AlGaN/GaN heterostructures: 《Journal of Semiconductors》2013年第8期201-204,共4页蔡金宝王金延刘洋徐哲王茂俊于民解冰吴文刚; supported by the National Natural Science Foundation of China(Nos.60406004,60890193,60736033);the National Key Micrometer/Nanometer Processing Laboratory,China; A novel wet etching method for AlGaN/GaN heterojunction structures is proposed using thermal oxidation f ollowed by wet etching in KOH solution.It is found that an AlGaN/GaN heterostructure after high temperature oxid...; 关键词：AlGaN/GaN wet etching thermal oxidation KOH solution

Study on the relationships between Raman shifts and temperature range for α-plane GaN using temperature-dependent Raman scattering被引量：1: 《Chinese Physics B》2013年第2期519-523,共5页王党会许晟瑞郝跃张进成许天旱林志宇周昊薛晓咏; Project supported by the Fundamental Research Funds for the Central Universities,China (Grant No. K50511250002);the National Key Science & Technology Special Project,China (Grant No. 2008ZX01002-002);the Major Program and State Key Program of the National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033);the Science Fund for Youths Scholars (Grant Nos. 61204006); In this paper,Raman shifts of a-plane GaN layers grown on r-plane sapphire substrates by low-pressure metal-organic chemical vapor deposition（LPMOCVD） are investigated.We compare the crystal qualities and study the ...; 关键词：metal-organic chemical vapor deposition Raman shift crystal quality anharmonic effect

Influence of double AlN buffer layers on the qualities of GaN films prepared by metal-organic chemical vapour deposition被引量：2: 《Chinese Physics B》2012年第12期403-407,共5页林志宇张进成周昊李小刚孟凡娜张琳霞艾姗许晟瑞赵一郝跃; Project supported by the National Key Science & Technology Special Project,China(Grant No.2008ZX01002-002);the Fundamental Research Funds for the Central Universities,China(Grant No.JY10000904009);the Major Program and State Key Program of the National Natural Science Foundation of China(Grant Nos.60890191 and 60736033); In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire （0001） substrate with double A1N buffer layers. The buffer layer consists of a low-temperature （LT）...; 关键词：GAN A1N buffer layer metal-organic chemical vapour deposition threading dislocations

Study on growing thick AlGaN layer on c-plane sapphire substrate and free-standing GaN substrate被引量：3: 《Science China(Physics,Mechanics & Astronomy)》2012年第12期2383-2388,共6页WANG DangHui ZHOU Hao ZHANG JinCheng XU ShengRui ZHANG LinXia MENG FanNa AI Shan HAO Yue; supported by the National Key Science and Technology Special Project,China(Grant No.2008ZX01002-002);the Major Program and State Key Program of the National Natural Science Foundation of China(Grant Nos.60890191 and 60736033);the Fundamental Research Funds for the Central Universities,China(Grant No. JY10000904009); In this study,the thick AlGaN epilayers have been grown on the c-plane sapphire substrate and the free-standing GaN substrate using low-temperature AlN nucleation layers by low-pressure metal-organic chemical vapor de...; 关键词：metal-organic chemical vapor deposition crystal quality surface morphology AlN nucleation layer

Progress in Group Ⅲ nitride semiconductor electronic devices被引量：1: 《Journal of Semiconductors》2012年第8期1-8,共8页郝跃张金风沈波刘新宇; Project supported by the Key Program of the National Natural Science Foundation of China(No.60736033); Recently there has been a rapid domestic development in group iII nitride semiconductor electronic materials and devices. This paper reviews the important progress in GaN-based wide bandgap microelectronic materials a...; 关键词：ALGAN/GAN InAlN/GaN HEMT MOSHEMT Gunn diode

Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization: 《Chinese Physics B》2012年第6期520-524,共5页周小伟许晟瑞张进成党纪源吕玲郝跃郭立新; Project supported by the Fundamental Research Funds for the Central Universities,China (Grant No. K50511250002);the National Key Science and Technology Special Project,China (Grant No. 2008ZX01002-002);the National Natural Science Foundation of China (Grant Nos. 60736033,60976068,and 61076097); We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask. Transmission electron microscopy, scanning electron microscopy...; 关键词：NONPOLAR SEMIPOLAR GAN yellow luminescence

AlGaN/GaN HEMTs with 0.2μm V-gate recesses for X-band application被引量：3: 《Journal of Semiconductors》2012年第3期24-27,共4页王冲何云龙郑雪峰郝跃马晓华张进城; Project supported by the National Key Science & Technology Special Project,China(No.2008ZX01002-002);the Major Program and State Key Program of National Natural Science Foundation of China(Nos.60890191,60736033);the Fundamental Research Funds for the Central Universities,China(Nos.K50510250003,K50510250006); AlGaN/GaN HEMTs with 0.2μm V-gate recesses were developed.The 0.2μm recess lengths were shrunk from the 0.6μm designed gate footprint length after isotropic SiN deposition and anisotropic recessed gate dry etching....; 关键词：high electron mobility transistors ALGAN/GAN V-gate recess

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