国家自然科学基金(60676032)

作品数：9被引量：10H指数：2
导出分析报告
相关作者：于彤军张国义康香宁陈志忠包魁更多>>
相关机构：北京大学四川大学更多>>
相关期刊：《Science China(Technological Sciences)》《Chinese Physics B》《物理学报》《Journal of Semiconductors》更多>>
相关主题：GANBONDINGLIGHT_EMITTING_DIODESA-PLANE垂直电极更多>>
相关领域：电子电信理学化学工程更多>>
-
在结果中检索

检索结果分析

结果分析中...
共 条 记 录，以下是1-9
全选清除导出
参考文献引证文献引用追踪
视图：
排序：
Gradual variation method for thick GaN heteroepitaxy by hydride vapour phase epitaxy被引量：2
《Chinese Physics B》2011年第9期439-444,共6页杜彦浩 吴洁君 罗伟科 John Goldsmith 韩彤 陶岳彬 杨志坚 于彤军 张国义 
Project supported by the National Basic Research Program of China (Grant No.2007CB307004);the National High Technology Research and Development Program of China (Grant No.2009AA03A198);the National Natural Science Foundation of China (Grant Nos.60776041 61076012,60876063,and 60676032);the Science and Technology Fund of Beijing,China (Grant No.Z101103050410003)
Two strain-state samples of GaN, labelled the strain-relief sample and the quality-improved sample, were grown by hydride vapour phase epitaxy （HVPE）, and then characterized by high-resolution X-ray diffraction, pho...
关键词：GAN hydride vapour phase epitaxy HETEROEPITAXY 
Nonpolar a-plane light-emitting diode with an in-situ SiN_x interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition
《Chinese Physics B》2011年第1期639-642,共4页方浩 龙浩 桑立雯 齐胜利 熊畅 于彤军 杨志坚 张国义 
Project supported by the National Natural Science Foundation of China(Grant Nos.60676032,60776041,60976009 and U0834001);the National Basic Research program of China(Grant No.2007CB307004)
We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiNx interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the c...
关键词：metal-organic chemical deposition III-NITRIDES NONPOLAR light emitting diodes 
Fabrication of dodecagonal pyramid on nitrogen face GaN and its effect on the light extraction
《Science China(Technological Sciences)》2010年第3期769-771,共3页QI ShengLi,CHEN ZhiZhong,SUN YongJian,FANG Hao,TAO YueBin,SANG LiWen,TIAN PengFei,DENG JunJing,ZHAO LuBing,YU TongJun,QIN ZhiXin&ZHANG GuoYi State Key Laboratory for Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,China 
supported by the National Natural Science Foundation of China(Grant Nos.60676032,60406007,60607003,60577030,60876063 and 60476028);the National Basic Research Program of China("973" Project)(Grant No.2007CB307004)
Wet etching has been widely used in defect evaluation for Ga-face GaN and surface roughness for N-face GaN dodecagonal pyramids has been fabricated on laser-lift-off N-face GaN by hot phosphor acid etching.The dodecag...
关键词：GAN N FACE WET ETCHING H3PO4 dodecagonal PYRAMID light extraction 
Analysis of junction temperatures in high-power GaN-based LEDs被引量：3
《Science China(Technological Sciences)》2010年第2期297-300,共4页JIANG YuXuan1, LI Zheng1, SUN YongJian1, YU TongJun1, CHEN ZhiZhong1, ZHANG GuoYi1, ZHANG GuangChen2 & FENG ShiWei2 1 State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China 2 School of Electronic Information & Control Engineering, Beijing University of Technology, Beijing 100124, China 
supported by the Natural Science Foundation of China, the Principal’s Fund of Peking University (Grant No. 60676032);the National Found for Fostering Talents of Basic Science (Grant No. NFFTBSJ0630311)
We presented the analysis of the incomplete conduction in bonding medium in high power GaN-based light-emitting diode (LED) packages. A numerical study was carried out with parametric model to understand the junction ...
关键词：JUNCTION temperature BONDING MEDIUM FEM simulation EFFECTIVE area 
Phase reaction of Au/Sn solder bonding for GaN-based vertical structure light emitting diodes
《Science China(Technological Sciences)》2010年第2期301-305,共5页TIAN PengFei, SUN YongJian, CHEN ZhiZhong, QI ShengLi, DENG JunJing, YU TongJun, QIN ZhiXin & ZHANG GuoYi State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China 
supported by the National Natural Science Foundation of China (Grant Nos. 60876063, 60676032, 60406007 and 60577030);the National Basic Research Program of China ("973" Project) (Grant No. TG2007CB307004)
Au/Sn solder bonding on Si substrates was used to fabricate the GaN-based vertical structure light emitting diodes (VSLEDs). The phase reaction of Au/Sn solder under different bonding conditions was investigated by th...
关键词：GaN LED BONDING Au/Sn PHASE 
Effects of Ⅴ/Ⅲ ratio on species diffusion anisotropy inthe MOCVD growth of non-polar a-plane GaN films
《Chinese Physics B》2010年第1期520-523,共4页赵璐冰 于彤军 吴洁君 杨志坚 张国义 
Project supported by the National Natural Science Foundation of China (Grant Nos. 60676032, 60577030 and 60476028);the National Basic Research Program of China (Grant No. 2007CB307004);the National Science Foundation for Post-doctoral Scientists of China (Grant No. 20060400018)
Non-polar a-plane （1120） GaN films have been grown on r-plane （1102） sapphire substrates by metal organic chemical vapour deposition. The influences of V/III ratio on the species diffusion anisotropy of a-plane Ga...
关键词：non-polar GaN V/III ratio ANISOTROPY migration length 
GaMnN材料红外光谱中洛伦兹振子模型的遗传算法研究被引量：1
《物理学报》2008年第9期5875-5880,共6页程兴华 唐龙谷 陈志涛 龚敏 于彤军 张国义 石瑞英 
国家自然科学基金(批准号:60676052,60676032);国家重点基础研究项目特别基金(批准号:TG2007CB307004)资助的课题~~
利用红外反射光谱研究了蓝宝石衬底上用金属有机物化学气相淀积方法生长的稀磁半导体GaMnN材料的晶格振动特性.并成功地将改进的遗传算法应用于其红外反射光谱洛伦兹振子模型参数的提取.通过与GaN薄膜的洛伦兹振子模型参数的对比研究发...
关键词：稀磁半导体GaMnN材料 遗传算法 洛伦兹振子模型 参数提取 
垂直电极结构GaN基发光二极管的研制被引量：4
《Journal of Semiconductors》2007年第z1期482-485,共4页康香宁 包魁 陈志忠 徐科 章蓓 于彤军 聂瑞娟 张国义 
国家自然科学基金资助项目(批准号:60607003,60676032,60577030)
利用激光剥离技术(LLO)和晶片键合技术将GaN基发光二极管(LED)薄膜与蓝宝石衬底分离并转移到Si衬底上,高分辨X射线衍射(HRXRD)和阴极荧光谱(CL)结果表明激光剥离过程没有影响GaN量子阱的结构和光学性质,GaN和InGaN/GaN多量子阱的发光峰...
关键词：GAN LED 激光剥离 金属合金键合 垂直电极 
InGaN/GaN和InGaN/AlGaN多量子阱中应变对光致发光特性的影响
《Journal of Semiconductors》2006年第z1期20-24,共5页于彤军 康香宁 秦志新 陈志忠 杨志坚 胡晓东 张国义 
国家自然科学基金(批准号:60676032,60276010,60376025,60276034)和北京市科技计划(批准号:H030430020230)资助项目 Project supported by the National Natural Science Foundation of China(Nos. 60676032,60276010,60376025,60276034) and the Beijing Scientific & Technical Program(No.H030130020230)
对蓝宝石衬底上的InGaN/GaN和InGaN/AlGaN多量子阱结构和经激光剥离去除衬底的InGaN/GaN和InGaN/AlGaN多量子阱结构薄膜样品,进行了光致发光谱、高分辨XRD和喇曼光谱测量.PL测量结果表明,相对于带有蓝宝石衬底的样品,InGaN/GaN多量子阱...
关键词：光致发光谱 INGAN ALGAN 多量子阱 应变 
全选清除导出
共1页<1>
检索报告 对象比较 聚类工具 使用帮助 返回顶部