国家自然科学基金(BK2009255)

作品数：14被引量：7H指数：2
导出分析报告
相关期刊：《Journal of Semiconductors》《Chinese Physics B》《Chinese Physics Letters》《Science China(Physics,Mechanics & Astronomy)》更多>>
相关主题：RATIOINGAN/GANINGANGAN_FILMV更多>>
相关领域：电子电信理学自然科学总论金属学及工艺更多>>
-
在结果中检索

检索结果分析

结果分析中...
共 条 记 录，以下是1-10
全选清除导出
参考文献引证文献引用追踪
视图：
排序：
GaN hexagonal pyramids formed by a photo-assisted chemical etching method
《Chinese Physics B》2014年第5期588-593,共6页张士英 修向前 华雪梅 谢自力 刘斌 陈鹏 韩平 陆海 张荣 郑有炓 
Project supported by the National Basic Research Program of China(Grant Nos.2011CB301900,2012CB619304,and 2010CB327504);the National High Technology Research and Development Program of China(Grant No.2011AA03A103);the National Nature Science Foundation of China(Grant Nos.60990311,60906025,60936004,and 61176063);the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK2011010 and BK2009255)
A series of experiments were conducted to systematically study the effects of etching conditions on GaN by a con-venient photo-assisted chemical （PAC） etching method. The solution concentration has an evident influe...
关键词：hexagonal pyramids GAN photo-assisted chemical etching 
Effect of the V/Ⅲ ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer被引量：2
《Science China(Physics,Mechanics & Astronomy)》2013年第9期1694-1698,共5页CHAI XuZhao ZHANG Yun LIU Bin XIE ZiLi HAN Ping YE JianDong HU LiQun XIU XiangQian ZHANG Rong ZHENG YouDou 
supported by the Special Funds for Major State Basic Research Project (Grant Nos.2011CB301900,2012CB619304,and 2012CB619200);the Hi-tech Research Project (Grant No.2011AA03A103);the National Natural Science Foundation of China (Grant Nos.60990311,60820106003,60906025,60936004,and 61176063);the Natural Science Foundation of Jiangsu Province (Grant Nos.BK2008019,BK2011010,BK2010385,BK2009255,and BK2010178);the Program Granted for Scientific Innovation Research of College Graduate in Jiangsu Province (Grant No.CXLX12_0049);the Research Funds from NJU-Yangzhou Institute of Opto-electronics;a project funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions
Effect of the V/III ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer has been studied by means of photoluminescence spectroscopy and high resolution X-ray diffraction.It is ...
关键词：yellow luminescence blue luminescence V/Ⅲ ratio 
The enhancement of light-emitting efficiency using GaN-based multiple quantum well light-emitting diodes with nanopillar arrays
《Chinese Physics B》2013年第8期679-682,共4页万图图 叶展圻 陶涛 谢自力 张荣 刘斌 修向前 李毅 韩平 施毅 郑有炓 
supported by the Special Funds for Major State Basic Research Project of China(Grant No.2011CB301900);the High Technology Research Program of China(Grant No.2009AA03A198);the National Natural Science Foundation of China(Grant Nos.60990311,60721063,60906025,60936004,60731160628,and 60820106003);the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK2008019,BK2010385,BK2009255,and BK2010178);the Research Funds from Nanjing University Yangzhou Institute of Opto-electronics,China
The quest for higher modulation speed and lower energy consumption has inevitably promoted the rapid development of semiconductor-based solid lighting devices in recent years. GaN-based light-emitting diodes （LEDs） ...
关键词：nanopillar arrays INGAN/GAN multiple quantum wells quantum efficiency 
Roles of V/III ratio and mixture degree in GaN growth: CFD and MD simulation study
《Chinese Physics B》2013年第1期513-517,共5页周安 修向前 张荣 谢自力 华雪梅 刘斌 韩平 顾书林 施毅 郑有炓 
Project supported by the National Basic Research Program of China (Grant No. 2011CB301900);the National High Technology Research and DevelopmentProgram of China (Grant No. 2011AA03A103);the National Natural Science Foundation of China (Grant Nos. 60990311, 60820106003, 60906025, and60936004);the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK2011010, BK2010385, BK2009255, and BK2010178)
To understand the mechanism of Gallium nitride （GaN） film growth is of great importance for their potential applications. In this paper, we investigate the growth behavior of the GaN film by combining computational ...
关键词：GaN growth computational fluid dynamics molecular dynamics 
Simulation of a new style vertical HVPE system被引量：1
《Science China(Physics,Mechanics & Astronomy)》2012年第12期2434-2438,共5页ZHOU An XIU XiangQian ZHANG Rong XIE ZiLi LIU Bin HAN Ping GU ShuLin SHI Yi ZHENG YouDou 
supported by the National Basic Research Program of China(Grant No.2011CB301900);the National Natural Science Foundation of China(Grant Nos.60990311,60820106003,60906025 and 60936004);the Natural Science Foundation of Jiangsu Province(Grant Nos. BK2008019,BK2010385,BK2009255 and BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics
In this paper,we simulate a new style vertical HVPE reactor by using computational fluid dynamics program FLUENT.In order to find the best parameter on the growth rate of Gallium nitride(GaN),we change the distance be...
关键词：GAN HVPE numerical simulation 
In-Plane Optical Anisotropy of a-Plane GaN Film on r-Plane Sapphire Grown by Metal Organic Chemical vapour Deposition
《Chinese Physics Letters》2012年第10期217-220,共4页DING Yu LIU Bin TAO Tao LI Yi ZHANG Zhao ZHANG Rong XIE Zi-Li ZHAO Hong GU Shu-Lin LV Peng ZHU Shi-Ning ZHENG You-Dou 
Supported by the National Basic Research Program of China under Grant Nos 2011CB301900,2012CB619304;the National High-Technology Research and Development Program of China under Grant No 2011AA03A103;the National Natural Science Foundation of China(60990311,60820106003,60906025,60936004,61176063);the Natural Science Foundation of Jiangsu Province(BK2008019,BK2011010,BK2010385,BK2009255,BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics.
The in-plane optical anisotropic properties of the non-polar a-plane GaN films grown by metal organic chemical vapour deposition are investigated by using polarised photoluminescence(PL),optical transmission and Raman...
关键词：SCATTERING VAPOUR ANISOTROPIC 
The growth and properties of an m-plane InN epilayer on LiAlO_2 (100) by metal-organic chemical vapor deposition
《Science China(Physics,Mechanics & Astronomy)》2012年第7期1249-1252,共4页XIE ZiLi ZHANG Rong FU DeYi LIU Bin XIU XiangQian HUA XueMei ZHAO Hong CHEN Peng HAN Ping SHI Yi ZHENG YouDou 
supported by the Special Funds for the Major State Basic Research Project (Grant No. 2011CB301900);the High-Tech Research Project (Grant No. 2011AA03A103);the National Natural Science Foundation of China (Grant Nos. 60990311, 60820106003, 60721063,60906025, 60936004 and 61176063);the Natural Science Foundation of Jiangsu Province (Grant Nos. BK2011010, BK2009255, BK2010178 andBK2010385);the Research Funds from NJU-Yangzhou Institute of Opto-electronics
The m-plane InN （1 100） epilayers have been grown on a LiAlO2 （1 0 0） substrate by a two-step growth method using a met- al-organic chemical vapor deposition （MOCVD） system. The low temperature InN buffer layer ...
关键词：crystal structure X-ray diffraction vapor-phase epitaxy INN semiconducting indium compound 
Influence of Dry Etching Damage on the Internal Quantum Efficiency of Nanorod InGaN/GaN Multiple Quantum Wells
《Chinese Physics Letters》2012年第7期276-279,共4页YU Zhi-Guo CHEN Peng YANG Guo-Feng LIU Bin XIE Zi-Li XIU Xiang-Qian WU Zhen-Long XU Feng XU Zhou HUA Xue-Mei HAN Ping SHI Yi ZHANG Rong ZHENG You-Dou 
Supported by the National Basic Research Program of China under Grant No 2011CB301900;the National Natural Science Foundation of China(61176063,60990311,60820106003,60906025,60936004);The Natural Science Foundation of Jiangsu Province(BK2008019,BK2010385,BK2009255,BK2010178);the Research Funds from NJU-Yangzhou Institute of Optoelectronics.
The influence of dry etching damage on the internal quantum efficiency of InGaN/GaN nanorod multiple quantum wells (MQWs) is studied.The samples were etched by inductively coupled plasma (ICP) etching via a selfassemb...
关键词：INGAN/GAN MEASUREMENT EFFICIENCY 
A model for thermal annealing on forming In—N clusters in InGaNP
《Science China(Physics,Mechanics & Astronomy)》2012年第5期798-801,共4页ZHAO ChuanZhen CHEN Lei LI NaNa ZHANG HuanHuan CHEN YaFei WEI Tong TANG ChunXiao XIE ZiLi 
supported by the Special Funds for the Major State Basic Research Project (Grant No.2011CB301900);the National Natural Science Foundation of China (Grant Nos.60990311,60820106003,60906025,60936004 and 61177078);the Natural Science Foundation of Jiangsu Province (Grant Nos.BK2008019,BK2010385,BK2009255 and BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics
We develop a model for the effect of thermal annealing on forming In--N dusters in GalnNP according to thermodynamics. The average energy variation for forming an In--N bond in the model is estimated according to the ...
关键词：InGaNP ANNEALING In--N clusters THERMODYNAMICS 
The temperature dependence of optical properties of InGaN alloys被引量：1
《Science China(Physics,Mechanics & Astronomy)》2012年第3期396-399,共4页ZHAO ChuanZhen ZHANG Rong LIU Bin FU DeYi CHEN Hui LI Ming XIE ZiLi XIU XiangQian GU ShuLin ZHENG YouDou 
supported by the Special Funds for Major State Basic Research Project (Grant No. 2011CB301901);the National Natural Science Foundation of China (Grant Nos. 60820106003,60990311 and 60906025);the Natural Science Foundation of Jiangsu Province (Grant Nos.BK2008019 and BK2009255);the Research Funds from NJU-Yangzhou Institute of Opto-electronics
In our experiments,the PL spectra of several In x Ga 1 x N alloy samples with In contents x=0.1,0.15 and 0.25 were measured as a function of temperature ranging from 10 K to 300 K.S-shaped temperature dependencies wer...
关键词：INGAN PHOTOLUMINESCENCE full width at half maximum 
全选清除导出
共2页<12>
检索报告 对象比较 聚类工具 使用帮助 返回顶部