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The enhancement of light-emitting efficiency using GaN-based multiple quantum well light-emitting diodes with nanopillar arrays: 《Chinese Physics B》2013年第8期679-682,共4页万图图叶展圻陶涛谢自力张荣刘斌修向前李毅韩平施毅郑有炓; supported by the Special Funds for Major State Basic Research Project of China(Grant No.2011CB301900);the High Technology Research Program of China(Grant No.2009AA03A198);the National Natural Science Foundation of China(Grant Nos.60990311,60721063,60906025,60936004,60731160628,and 60820106003);the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK2008019,BK2010385,BK2009255,and BK2010178);the Research Funds from Nanjing University Yangzhou Institute of Opto-electronics,China; The quest for higher modulation speed and lower energy consumption has inevitably promoted the rapid development of semiconductor-based solid lighting devices in recent years. GaN-based light-emitting diodes （LEDs） ...; 关键词：nanopillar arrays INGAN/GAN multiple quantum wells quantum efficiency

Roles of V/III ratio and mixture degree in GaN growth: CFD and MD simulation study: 《Chinese Physics B》2013年第1期513-517,共5页周安修向前张荣谢自力华雪梅刘斌韩平顾书林施毅郑有炓; Project supported by the National Basic Research Program of China (Grant No. 2011CB301900);the National High Technology Research and DevelopmentProgram of China (Grant No. 2011AA03A103);the National Natural Science Foundation of China (Grant Nos. 60990311, 60820106003, 60906025, and60936004);the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK2011010, BK2010385, BK2009255, and BK2010178); To understand the mechanism of Gallium nitride （GaN） film growth is of great importance for their potential applications. In this paper, we investigate the growth behavior of the GaN film by combining computational ...; 关键词：GaN growth computational fluid dynamics molecular dynamics

Simulation of a new style vertical HVPE system被引量：1: 《Science China(Physics,Mechanics & Astronomy)》2012年第12期2434-2438,共5页ZHOU An XIU XiangQian ZHANG Rong XIE ZiLi LIU Bin HAN Ping GU ShuLin SHI Yi ZHENG YouDou; supported by the National Basic Research Program of China(Grant No.2011CB301900);the National Natural Science Foundation of China(Grant Nos.60990311,60820106003,60906025 and 60936004);the Natural Science Foundation of Jiangsu Province(Grant Nos. BK2008019,BK2010385,BK2009255 and BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics; In this paper,we simulate a new style vertical HVPE reactor by using computational fluid dynamics program FLUENT.In order to find the best parameter on the growth rate of Gallium nitride(GaN),we change the distance be...; 关键词：GAN HVPE numerical simulation

In-Plane Optical Anisotropy of a-Plane GaN Film on r-Plane Sapphire Grown by Metal Organic Chemical vapour Deposition: 《Chinese Physics Letters》2012年第10期217-220,共4页DING Yu LIU Bin TAO Tao LI Yi ZHANG Zhao ZHANG Rong XIE Zi-Li ZHAO Hong GU Shu-Lin LV Peng ZHU Shi-Ning ZHENG You-Dou; Supported by the National Basic Research Program of China under Grant Nos 2011CB301900,2012CB619304;the National High-Technology Research and Development Program of China under Grant No 2011AA03A103;the National Natural Science Foundation of China(60990311,60820106003,60906025,60936004,61176063);the Natural Science Foundation of Jiangsu Province(BK2008019,BK2011010,BK2010385,BK2009255,BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics.; The in-plane optical anisotropic properties of the non-polar a-plane GaN films grown by metal organic chemical vapour deposition are investigated by using polarised photoluminescence(PL),optical transmission and Raman...; 关键词：SCATTERING VAPOUR ANISOTROPIC

The growth and properties of an m-plane InN epilayer on LiAlO_2 (100) by metal-organic chemical vapor deposition: 《Science China(Physics,Mechanics & Astronomy)》2012年第7期1249-1252,共4页XIE ZiLi ZHANG Rong FU DeYi LIU Bin XIU XiangQian HUA XueMei ZHAO Hong CHEN Peng HAN Ping SHI Yi ZHENG YouDou; supported by the Special Funds for the Major State Basic Research Project (Grant No. 2011CB301900);the High-Tech Research Project (Grant No. 2011AA03A103);the National Natural Science Foundation of China (Grant Nos. 60990311, 60820106003, 60721063,60906025, 60936004 and 61176063);the Natural Science Foundation of Jiangsu Province (Grant Nos. BK2011010, BK2009255, BK2010178 andBK2010385);the Research Funds from NJU-Yangzhou Institute of Opto-electronics; The m-plane InN （1 100） epilayers have been grown on a LiAlO2 （1 0 0） substrate by a two-step growth method using a met- al-organic chemical vapor deposition （MOCVD） system. The low temperature InN buffer layer ...; 关键词：crystal structure X-ray diffraction vapor-phase epitaxy INN semiconducting indium compound

Influence of Dry Etching Damage on the Internal Quantum Efficiency of Nanorod InGaN/GaN Multiple Quantum Wells: 《Chinese Physics Letters》2012年第7期276-279,共4页YU Zhi-Guo CHEN Peng YANG Guo-Feng LIU Bin XIE Zi-Li XIU Xiang-Qian WU Zhen-Long XU Feng XU Zhou HUA Xue-Mei HAN Ping SHI Yi ZHANG Rong ZHENG You-Dou; Supported by the National Basic Research Program of China under Grant No 2011CB301900;the National Natural Science Foundation of China(61176063,60990311,60820106003,60906025,60936004);The Natural Science Foundation of Jiangsu Province(BK2008019,BK2010385,BK2009255,BK2010178);the Research Funds from NJU-Yangzhou Institute of Optoelectronics.; The influence of dry etching damage on the internal quantum efficiency of InGaN/GaN nanorod multiple quantum wells (MQWs) is studied.The samples were etched by inductively coupled plasma (ICP) etching via a selfassemb...; 关键词：INGAN/GAN MEASUREMENT EFFICIENCY

Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD: 《Journal of Semiconductors》2012年第7期16-19,共4页陶志阔张荣修向前崔旭高李丽李鑫谢自力郑有炓郑荣坤 Simon P Ringer; supported by the Special Funds for Major State Basic Research Project,China(No.2011CB301900);the Hi-Tech Research Project,China(No.2009AA03A198);the National Natural Science Foundation of China(Nos.60990311,60820106003,608201060,60906025,60936004,61106009);the Natural Science Foundation of Jiangsu Province,China(Nos.BK2008019,K2009255,BK2010178, BK2010385);the Research Funds from NJU-Yangzhou Institute of Opto-Electronics; We have grown transition metal （Fe, Mn） doped GaN thin films on c-oriented sapphire by metal-organic chemical vapor deposition. By varying the flow of the metal precursor, a series of samples with different ion con-...; 关键词：MOCVD DMS high-resolution TEM

A model for thermal annealing on forming In—N clusters in InGaNP: 《Science China(Physics,Mechanics & Astronomy)》2012年第5期798-801,共4页ZHAO ChuanZhen CHEN Lei LI NaNa ZHANG HuanHuan CHEN YaFei WEI Tong TANG ChunXiao XIE ZiLi; supported by the Special Funds for the Major State Basic Research Project (Grant No.2011CB301900);the National Natural Science Foundation of China (Grant Nos.60990311,60820106003,60906025,60936004 and 61177078);the Natural Science Foundation of Jiangsu Province (Grant Nos.BK2008019,BK2010385,BK2009255 and BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics; We develop a model for the effect of thermal annealing on forming In--N dusters in GalnNP according to thermodynamics. The average energy variation for forming an In--N bond in the model is estimated according to the ...; 关键词：InGaNP ANNEALING In--N clusters THERMODYNAMICS

Raman Scattering Study of In_(x)Ga_(1-x)N Alloys with Low Indium Compositions: 《Chinese Physics Letters》2012年第2期211-213,共3页TENG Long ZHANG Rong XIE Zi-Li TAO Tao ZHANG Zhao LI Ye-Cao LIU Bin CHEN Peng HAN Ping ZHENG You-Dou; Supported by the National Basic Research Program of China(2011CB301900);the Natioanal Hi-Tech Research and Develop-ment Program of China(2011AA03A103);the National Natural Science Foundation of China(60990311,60820106003,60906025,60936004);the Natural Science Foundation of Jiangsu Province(BK2011010,BK2010385,BK2010045,BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics,Fok Ying Tong Education Foundation(122028).; In_(x)Ga_(1-x)N alloys with low indium composition x in the range 0.13 ≤ x ≤ 0.23 are systematically studied mainly based on a Raman scattering technique.Scanning electron microscopy and x-ray diffraction results sh...; 关键词：technique relaxed ALLOYS

Effects of V/III ratio on the growth of a-plane GaN films: 《Chinese Physics B》2011年第10期368-372,共5页谢自力李弋刘斌张荣修向前陈鹏郑有炓; supported by the Special Funds for Major State Basic Research Project of China (Grant No. 2011CB301900);High Technology Research Program of China (Grant No. 2009AA03A198);the National Natural Science Foundation of China (Grant Nos. 60990311, 60721063, 60906025, 60936004, 60731160628, and 60820106003);the Natural Science Foundation of Jiangsu Province of China (Grant Nos. BK2008019, BK2010385, BK2009255, and BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics, China; The non-polar a-plane GaN is grown on an r-plane sapphire substrate directly without a buffer layer by metal- organic chemical vapour deposition and the effects of V/III ratio growth conditions are investigated. Atomi...; 关键词：V/III ratio a-plane GaN NON-POLAR metal-organic chemical vapour deposition

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