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Ultra-low specific on-resistance high-voltage vertical double diffusion metal–oxide–semiconductor field-effect transistor with continuous electron accumulation layer被引量：1: 《Chinese Physics B》2016年第4期450-455,共6页马达罗小蓉魏杰谭桥周坤吴俊峰; supported by the National Natural Science Foundation of China(Grant Nos.61176069 and 61376079);the Fundamental Research Funds for the Central Universities,China(Grant No.ZYGX2014Z006); A new ultra-low specific on-resistance （Ron,sp） vertical double diffusion metal-oxide-semiconductor field-effect tran- sistor （VDMOS） with continuous electron accumulation （CEA） layer, denoted as CEA-VDMOS, is p...; 关键词：electron accumulation layer PN junctions low specific on-resistance high breakdown voltage

A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology被引量：1: 《Chinese Physics B》2016年第2期436-440,共5页张彦辉魏杰尹超谭桥刘建平李鹏程罗小蓉; Project supported by the National Natural Science Foundation of China(Grant Nos.61176069 and 61376079); A uniform doping ultra-thin silicon-on-insulator（SOI） lateral-double-diffused metal-oxide-semiconductor（LDMOS）with low specific on-resistance（R_on,sp） and high breakdown voltage（BV） is proposed and its mechani...; 关键词：LDMOS accumulation gate back-side etching breakdown voltage specific on-resistance

An ultra-low specific on-resistance trench LDMOS with a U-shaped gate and accumulation layer: 《Chinese Physics B》2015年第4期399-404,共6页李鹏程罗小蓉罗尹春周坤石先龙张彦辉吕孟山; Project supported by the National Natural Science Foundation of China(Grant Nos.61176069 and 61376079);the Program for New Century Excellent Talents at the University of Ministry of Education of China(Grant No.NCET-11-0062); An ultra-low specific on-resistance （Ron,sp） oxide trench-type silicon-on-insulator （SOI） lateral double-diffusion metal-oxide semiconductor （LDMOS） with an enhanced breakdown voltage （BV） is proposed and inve...; 关键词：TRENCH U-shaped gate specific on-resistance breakdown voltage

A novel high figure-of-merit SOI SJ LDMOS with ultra-strong charge accumulation effect: 《Journal of Semiconductors》2015年第3期79-84,共6页田瑞超罗小蓉周坤徐青魏杰张波李肇基; Project supported by the National Natural Science Foundation of China(Nos.61176069,61376079);the Program for New Century Excellent Talents in University of Ministry of Education of China(No.NCET-11-0062); A novel silicon-on-insulator（SOI） super-junction（SJ） LDMOS with an ultra-strong charge accumulation effect is proposed. It has two key features： an assisted-accumulation trench-type extending gate（TEG） with a h...; 关键词：charge accumulation effect super junction breakdown voltage specific on-resistance

Ultralow specific on-resistance high voltage trench SOI LDMOS with enhanced RESURF effect被引量：1: 《Journal of Semiconductors》2015年第2期99-105,共7页徐青罗小蓉周坤田瑞超魏杰范远航张波; Project supported by the National Natural Science Foundation of China(Nos.61176069,61376079); A RESURF-enhanced high voltage SOl LDMOS （ER-LDMOS） with an ultralow specific on-resistance （Ron, sp） is proposed. The device features an oxide trench in the drift region, a P-pillar at the sidewall of the trench,...; 关键词：RESURF-enhanced multiple-directional depletion effect silicon-on-insulator breakdown voltage specific on-resistance

Eliminating the floating-body effects in a novel CMOS-compatible thin-SOI LDMOS: 《Journal of Semiconductors》2013年第9期53-57,共5页蒋永恒罗小蓉李燕妃王沛范叶周坤王琦胡夏融张波; supported by the National Natural Science Foundation of China(Nos.61176069,60976060,51308020304); A novel CMOS-compatible thin film SOI LDMOS with a novel body contact structure is proposed. It has a Si window and a P-body extended to the substrate through the Si window, thus, the P-body touches the P＋ region to ...; 关键词：thin film SOI LDMOS body contact floating body effect parasitic BJT effect

High voltage SOI LDMOS with a compound buried layer: 《Journal of Semiconductors》2012年第10期37-41,共5页罗小蓉胡刚毅周坤蒋永恒王沛王琦罗尹春张波李肇基; supported by the National Natural Science Foundation of China(Nos.61176069,60976060);the National Key Laboratory of Analogue Integrated Circuit,China(No.9140C090304110C0905); An SOI LDMOS with a compound buried layer（CBL） was proposed.The CBL consists of an upper buried oxide layer（UBOX） with a Si window and two oxide steps,a polysilicon layer and a lower buried oxide layer （LBOX）.In...; 关键词：SOI electric field specific on-resistance breakdown voltage

Universal trench design method for a high-voltage SOI trench LDMOS被引量：1: 《Journal of Semiconductors》2012年第7期47-50,共4页胡夏融张波罗小蓉李肇基; supported by the National Natural Science Foundation of China(Nos.61176069,60976060);the National Key Laboratory of Analogue Integrated Circuit,China(No.9140C090304110C0905); The design method for a high-voltage SOI trench LDMOS for various trench permittivities, widths and depths is introduced. A universal method for efficient design is presented for the first time, taking the trade-off b...; 关键词：SOI TRENCH PERMITTIVITY RESURF LDMOS breakdown voltage

A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS: 《Chinese Physics B》2012年第7期592-595,共4页胡夏融张波罗小蓉王元刚雷天飞李肇基; Project supported by the National Natural Science Foundation of China (Grant Nos. 61176069 and 60976060);the National Key Laboratory of Analogue Integrated Circuit, China (Grant No. 9140C090304110C0905); A new analytical model for the surface electric field distribution and breakdown voltage of the silicon oil insulator （SOI） trench lateral double-diffused metal-oxide-semiconductor （LDMOS） is presented. Based on t...; 关键词：silicon on insulator （SOI） TRENCH lateral double-diffused metal-oxide-semiconductor（LDMOS） breakdown voltage

A low on-resistance triple RESURF SOI LDMOS with planar and trench gate integration被引量：2: 《Chinese Physics B》2012年第6期560-564,共5页罗小蓉姚国亮张正元蒋永恒周坤王沛王元刚雷天飞张云轩魏杰; Project supported by the National Natural Science Foundation of China (Grant Nos. 61176069 and 609 76060);the National Key Laboratory of Analogue Integrated Circuit (Grant No. 9140C090304110C0905); A low on-resistance （Ron,sp） integrable silicon-on-insulator （SOI） n-channel lateral double-diffused metal-oxide-semiconductor （LDMOS） is proposed and its mechanism is investigated by simulation. The LDMOS has t...; 关键词：SOI electric field breakdown voltage trench gate specific on-resistance

国家自然科学基金(s61176069)