supported by the National Science Fund for Distinguished Young Scholars (Grant No. 60925017);the National Natural Science Foundation of China (Grant Nos. 10990100,60836003 and 60776047)
We have investigated the distribution of the electric field in p-i-n GaN avalanche photodiodes under different reverse bias values. type and separate absorption and multiplication (SAM) type We have also analyzed th...
supported by the National Natural Science Foundation of China (Grant Nos.60506001,60976045,60836003,60776047 and 61076119) ;the National Basic Research Program of China ("973" Project) (Grant No. 2007CB936700);the National Science Foundation for Distinguished Yong Scholar (Grant No. 60925017)
A method to calculate the reflectivity of the coated cavity facet was proposed, and the distribution of the optical power near the two coated cavity facets was calculated for GaN-based laser diodes. A new design metho...
Project supported by the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 60925017);the National Natural Science Foundation of China (Grant Nos. 10990100,60836003,and 60776047);the National Basic Research Program of China (Grant No. 2007CB936700);the National High Technology Research and Development Program of China(Grant No. 2007AA03Z401)
In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a lowtemperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It ...
Project supported by the National Natural Science Foundation of China (Grant Nos. 60976045,60506001,60836003 and 60776047);the National Basic Research Program of China (Grant No. 2007CB936700);the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 60925017)
This paper reports that a long delay between the beginning of pumping current pulse and the onset of optical pulse is observed in InGaN laser diodes. The delay time decreases as the pumping current increases, and the ...
Project supported by the National Natural Science Foundation of China (Grant Nos. 60506001, 60776047, 60976045, and 60836003);the National Basic Research Programme of China (Grant No. 2007CB936700);the National Natural Science Foundation for Distinguished Young Scholars (Grant No. 60925017)
The composition and stain distributions in the InGaN epitaxial films are jointly measured by employing various x-ray diffraction (XRD) techniques, including out-of-plane XRD at special planes, in-plane grazing incid...
supported by the National Natural Science Foundation of China (Grant Nos. 60506001,60776047,60976045 and 60836003);the National Basic Research Programme of China (Grant No. 2007CB936700);the National Science Foundation for Distinguished Young Scholars,China (Grant No. 60925017)
This paper investigates the major structural parameters, such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in...