Project supported by the National Basic Research Program of China(No.2010CB327601);the Key International Cooperation Research Project of the National Natural Science Foundation of China(No.90201035);the Chinese Universities Scientific Fund(No. BUPT2009RC0410);the National Natural Science Foundation of China(No.61077049);the 111 Program of China(No.B07005).
Vertical p-type gallium arsenide (GaAs) nanowires with pure zinc blende structure were grown on GaAs (111) B substrate by metal-organic chemical vapor deposition via a Au-catalyst vapor-liquid-solid mechanism. The...