云南高校图书馆联盟文献共享服务平台- 国家自然科学基金(60976060)

国家自然科学基金(60976060): 作品数：20被引量：19H指数：2; 导出分析报告; 相关作者：陈继兵郭威安兵祝超陈永航更多>>; 相关机构：华中科技大学五邑大学武汉光电国家实验室更多>>; 相关期刊：《Chinese Physics B》《Journal of Semiconductors》《电子工艺技术》更多>>; 相关主题：SOIELECTRIC_FIELDRESURFSOI_LDMOSTRENCH更多>>; 相关领域：电子电信自动化与计算机技术更多>>

Eliminating the floating-body effects in a novel CMOS-compatible thin-SOI LDMOS: 《Journal of Semiconductors》2013年第9期53-57,共5页蒋永恒罗小蓉李燕妃王沛范叶周坤王琦胡夏融张波; supported by the National Natural Science Foundation of China(Nos.61176069,60976060,51308020304); A novel CMOS-compatible thin film SOI LDMOS with a novel body contact structure is proposed. It has a Si window and a P-body extended to the substrate through the Si window, thus, the P-body touches the P＋ region to ...; 关键词：thin film SOI LDMOS body contact floating body effect parasitic BJT effect

LED光源的结温测量方法被引量：12: 《电子工艺技术》2012年第6期320-322,340,共4页郭威陈继兵安兵; 国家自然科学基金项目(项目编号:60976060); 分别采用红外热像仪、管脚温度法和Ansys模拟计算法分析测量了LED筒灯的结温。结果表明:管脚测量法能够通过测量管脚的温度,准确地推测出LED芯片的结温。由于这种方法具有非破坏性、精确性、简易性和非接触性,因此可广泛应用于LED结温...; 关键词：LED筒灯结温热阻红外热像

基于自重式热管的LED工矿灯散热研究被引量：1: 《电子工艺技术》2012年第6期323-325,329,共4页杨卓然陈永航祝超吴懿平; 国家自然科学基金项目(项目编号:60976060); 设计制作了一种带有自重式热管的散热器,并应用于100 W LED工矿灯。测试了LED工矿灯的光源模组引脚温度以及工作状态下散热器温度的分布。结果表明:自重式热管散热的光源引脚温度要比传统散热方式低4℃,光源表面温度要比传统散热方式的...; 关键词：大功率LED 工矿灯自重式热管散热

High voltage SOI LDMOS with a compound buried layer: 《Journal of Semiconductors》2012年第10期37-41,共5页罗小蓉胡刚毅周坤蒋永恒王沛王琦罗尹春张波李肇基; supported by the National Natural Science Foundation of China(Nos.61176069,60976060);the National Key Laboratory of Analogue Integrated Circuit,China(No.9140C090304110C0905); An SOI LDMOS with a compound buried layer（CBL） was proposed.The CBL consists of an upper buried oxide layer（UBOX） with a Si window and two oxide steps,a polysilicon layer and a lower buried oxide layer （LBOX）.In...; 关键词：SOI electric field specific on-resistance breakdown voltage

Universal trench design method for a high-voltage SOI trench LDMOS被引量：1: 《Journal of Semiconductors》2012年第7期47-50,共4页胡夏融张波罗小蓉李肇基; supported by the National Natural Science Foundation of China(Nos.61176069,60976060);the National Key Laboratory of Analogue Integrated Circuit,China(No.9140C090304110C0905); The design method for a high-voltage SOI trench LDMOS for various trench permittivities, widths and depths is introduced. A universal method for efficient design is presented for the first time, taking the trade-off b...; 关键词：SOI TRENCH PERMITTIVITY RESURF LDMOS breakdown voltage

A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS: 《Chinese Physics B》2012年第7期592-595,共4页胡夏融张波罗小蓉王元刚雷天飞李肇基; Project supported by the National Natural Science Foundation of China (Grant Nos. 61176069 and 60976060);the National Key Laboratory of Analogue Integrated Circuit, China (Grant No. 9140C090304110C0905); A new analytical model for the surface electric field distribution and breakdown voltage of the silicon oil insulator （SOI） trench lateral double-diffused metal-oxide-semiconductor （LDMOS） is presented. Based on t...; 关键词：silicon on insulator （SOI） TRENCH lateral double-diffused metal-oxide-semiconductor（LDMOS） breakdown voltage

A low on-resistance triple RESURF SOI LDMOS with planar and trench gate integration被引量：2: 《Chinese Physics B》2012年第6期560-564,共5页罗小蓉姚国亮张正元蒋永恒周坤王沛王元刚雷天飞张云轩魏杰; Project supported by the National Natural Science Foundation of China (Grant Nos. 61176069 and 609 76060);the National Key Laboratory of Analogue Integrated Circuit (Grant No. 9140C090304110C0905); A low on-resistance （Ron,sp） integrable silicon-on-insulator （SOI） n-channel lateral double-diffused metal-oxide-semiconductor （LDMOS） is proposed and its mechanism is investigated by simulation. The LDMOS has t...; 关键词：SOI electric field breakdown voltage trench gate specific on-resistance

Novel SOI double-gate MOSFET with a P-type buried layer: 《Journal of Semiconductors》2012年第5期57-60,共4页姚国亮罗小蓉王琦蒋永恒王沛周坤吴丽娟张波李肇基; Project supported by the National Natural Science Foundation of China(Nos.60806025,60976060);the State Key Laboratory of Electronic Thin Films and Integrated Devices,China(No.CXJJ201004); An ultra-low specific on-resistance（R_（on,sp）） integrated silicon-on-insulator（SOI） double-gate triple RESURF（reduced surface field） n-type MOSFET（DG T-RESURF） is proposed.The MOSFET features two structures...; 关键词：SOI double gates specific on-resistance RESURF breakdown voltage

Partial-SOI high voltage P-channel LDMOS with interface accumulation holes: 《Chinese Physics B》2011年第10期373-378,共6页吴丽娟胡盛东罗小蓉张波李肇基; supported by the National Natural Science Foundation of China (Grant Nos. 60806025 and 60976060);the Funds of the National Laboratory of Analog Integrated Circuit (Grant No. 9140C0903070904);the Youth Teacher Foundation of the University of Electronic Science and Technology of China (Grant No. jx0721); A new partial SOI （silion-on-insulator）（PSOI） high voltage P-channel LDMOS （lateral double-diffused metal-oxide semiconductor） with an interface hole islands （HI） layer is proposed and its breakdown character...; 关键词：interface charges breakdown voltage partial-SOI accumulation holes self-heating effect

Ultra-low specific on-resistance SOI double-gate trench-type MOSFET被引量：1: 《Journal of Semiconductors》2011年第10期49-52,共4页雷天飞罗小蓉葛锐陈曦王元刚姚国亮蒋永恒张波李肇基; Project supported by the National Natural Science Foundation of China(Nos.60806025,60976060);the National Key Laboratory of Analogy Integrated Circuit(No.9140C090304110C0905);the State Key Laboratory of Electronic Thin Films and Integrated Devices, China(No.CXJJ201 004); An ultra-low specific on-resistance（R_（on,sp）） silicon-on-insulator（SOI） double-gate trench-type MOSFET （DG trench MOSFET） is proposed.The MOSFET features double gates and an oxide trench：the oxide trench is ...; 关键词：double gates TRENCH specific on-resistance breakdown voltage

国家自然科学基金(60976060)