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NMOSFETS: 作品数：46被引量：31H指数：3; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：海潮和毕津顺张炯钱鹤韩郑生更多>>; 相关机构：中国科学院微电子研究所清华大学西安电子科技大学北京大学更多>>; 相关期刊：《Chinese Physics B》《物理学报》《Journal of Electronics(China)》《World Journal of Nano Science and Engineering》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划国家教育部博士点基金更多>>

Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs: 《Chinese Physics Letters》2018年第4期74-77,共4页Qi-Wen Zheng Jiang-Wei Cui Ying Wei Xue-Feng Yu Wu Lu Diyuan Ren Qi Guo; Supported by the National Natural Science Foundation of China under Grant Nos 11605282,11505282 and U1532261;the West Light Foundation of the Chinese Academy of Sciences under Grant No 2015-XBQN-B-15; The bias dependence of radiation-induced narrow-width channel effects（RINCEs） in 65-nm n-type metal-oxidesemiconductor field-effect transistors（NMOSFETs） is investigated. The threshold voltage of the narrow-width6...; 关键词：Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs

Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation: 《Chinese Physics B》2018年第2期619-624,共6页张梦映胡志远毕大炜戴丽华张正选; Project supported by the Weapon Equipment Pre-Research Foundation of China(Grant No.9140A11020114ZK34147);the Shanghai Municipal Natural Science Foundation,China(Grant No.15ZR1447100); Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative thr...; 关键词：partiallydepleted silicon-on-insulator（PD SOI） totalionizingdose（TID） radiationinduced narrow channel effect（RINCE） drain induced barrier lowering（DIBL） effect

Influence of Total Ionizing Dose Irradiation on Low-Frequency Noise Responses in Partially Depleted SOI nMOSFETs: 《Chinese Physics Letters》2017年第11期106-109,共4页彭超恩云飞雷志锋陈义强刘远李斌; Supported by the National Postdoctoral Program for Innovative Talents under Grant No BX201600037;the Science and Technology Research Project of Guangdong Province under Grant Nos 20158090901048 and 2015B090912002;the Distinguished Young Scientist Program of Guangdong Province under Grant No 2015A030306002; Total ionizing dose effect induced low frequency degradations in 130nm partially depleted silicon-on-insulator （SOI） technology are studied by ^60Co γ -ray irradiation. The experimental results show that the flick...; 关键词：SOI MOSFET Influence of Total Ionizing Dose Irradiation on Low-Frequency Noise Responses in Partially Depleted SOI nMOSFETs

Positive Bias Temperature Instability Degradation of Buried InGaAs Channel nMOSFETs with InGaP Barrier Layer and Al2O3 Dielectric: 《Chinese Physics Letters》2017年第5期101-105,共5页王盛凯马磊常虎东孙兵苏玉玉钟乐李海鸥金智刘新宇刘洪刚; Supported by the National Science and Technology Major Project of China under Grant No 2011ZX02708-003;the National Natural Science Foundation of China under Grant No 61504165;the Opening Project of Key Laboratory of Microelectronics Devices and Integrated Technology of Institute of Microelectronics of Chinese Academy of Sciences; Positive bias temperature instability stress induced interface trap density in a buried InGaAs channel metaloxide-semiconductor field-effect transistor with a InCaP barrier layer and Al2O3 dielectric is investigated. ...; 关键词：INGAAS Positive Bias Temperature Instability Degradation of Buried InGaAs Channel nMOSFETs with InGaP Barrier Layer and Al2O3 Dielectric MOSFET Al

Investigation of the surface orientation influence on 10-nm double gate GaSb nMOSFETs: 《Chinese Physics B》2017年第4期383-387,共5页邸绍岩沈磊伦志远常鹏鹰赵凯卢朓杜刚刘晓彦; Project supported by the National Natural Science Foundation of China(Grant Nos.61674008,61421005,and 61404005); The performance of double gate GaSb nMOSFETs with surface orientations of（100） and（111） are compared by deterministically solving the time-dependent Boltzmann transport equation（BTE）.Results show that the on-sta...; 关键词：Boltzmann transport equation GASB surface orientation double gate

Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs被引量：1: 《Chinese Physics B》2017年第3期388-394,共7页樊双胡志远张正选宁冰旭毕大炜戴丽华张梦映张乐情; Project supported by Shanghai Municipal Natural Science Foundation,China(Grant No.15ZR1447100); Total ionizing dose induced single transistor latchup effects for 130 nm partially depleted silicon-on-insulator （PDSOI） NMOSFETs with the bodies floating were studied in this work. The latchup phenomenon strongly c...; 关键词：total ionizing dose （TID） single transistor latchup （STL） band-to-band tunneling （BBT） partiallydepleted silicon-on-insulator （PDSOI）

Total-Ionizing-Dose-Induced Body Current Lowering in the 130 nm PDSOI I/O NMOSFETs: 《Chinese Physics Letters》2017年第1期90-93,共4页刘小年戴丽华宁冰旭邹世昌; The body current lowering effect of 130 nm partially depleted silicon-on-insulator (PDSOI) input/output (I/O) n-type metal-oxide-semiconductor field-effect transistors (NMOSFETs) induced by total-ionizing dose is obse...; 关键词：PDSOI Total-Ionizing-Dose-Induced Body Current Lowering in the 130 nm PDSOI I/O NMOSFETs MOSFET

Total dose responses and reliability issues of 65 nm NMOSFETs: 《Journal of Semiconductors》2016年第6期129-135,共7页余德昭郑齐文崔江维周航余学峰郭旗; supported by“Light of West China”Program of CAS(No.XBBS201219); In this paper,total dose responses and reliability issues of MOSFETs fabricated by 65 nm CMOS technology were examined. ＂Radiation-induced narrow channel effect＂ is observed in a narrow channel device.Similar to tot...; 关键词：total dose responses reliability lifetime

Influence of ultra-thin TiN thickness(1.4 nm and 2.4 nm) on positive bias temperature instability(PBTI)of high-k/metal gate nMOSFETs with gate-last process: 《Chinese Physics B》2015年第12期499-502,共4页祁路伟杨红任尚清徐烨峰罗维春徐昊王艳蓉唐波王文武闫江朱慧珑赵超陈大鹏叶甜春; Project supported by the National High Technology Research and Development Program of China(Grant No.SS2015AA010601);the National Natural Science Foundation of China(Grant Nos.61176091 and 61306129); The positive bias temperature instability（PBTI） degradations of high-k/metal gate（HK/MG） n MOSFETs with thin TiN capping layers（1.4 nm and 2.4 nm） are systemically investigated. In this paper, the trap energy di...; 关键词：positive bias temperature instability（PBTI） HK/MG Ea trap energy distribution

Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs: 《Journal of Semiconductors》2015年第9期66-70,共5页方雯 Eddy Simoen Li Chikang Marc Aoulaiche 罗军赵超 Cor Claeys; This paper studies the amplitude of random telegraph noise （RTN） caused by a single trap in the sili- con film of ultra-thin buried oxide （UTBOX） silicon-on-insulator （SOl） devices. The film-defect-related RTN w...; 关键词：random telegraph noise low frequency noise ultra-thin BOX SILICON-ON-INSULATOR single charge trap

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