国家重点基础研究发展计划(2010CB934300)

作品数：22被引量：14H指数：2
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相关作者：宋志棠宏潇陈后鹏陈一峰李喜更多>>
相关机构：中国科学院上海新储集成电路有限公司同济大学更多>>
相关期刊：《Nano-Micro Letters》《微电子学》《Chinese Physics B》《Chinese Physics Letters》更多>>
相关主题：相变存储器TESBPHASE-CHANGESLURRY更多>>
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非易失性突触存储阵列及神经元电路的设计被引量：2
《微电子学与计算机》2017年第11期1-5,共5页叶勇 亢勇 景蔚亮 杜源 宋志棠 陈邦明 
国家自然科学基金(61076121,61176122,61106001,61261160500,61376006);中国科学院战略性先导科技专项(XDA09020402);国家重点基础研究发展计划(2013CBA01904,2013CBA01900,2010CB934300,2011CBA00607,2011CB932804);国家集成电路重大专项(2009ZX02023-003)
传统的神经形态芯片一般采用SRAM阵列来存储突触权重,掉电后数据会丢失,且只能通过单一地址译码进行存取,不利于突触权重的更新.为此,本文基于40nm先进工艺并结合嵌入式相变存储器设计了一种非易失性突触存储阵列及神经元电路,为神经元...
关键词：神经元 突触 非易失性 相变存储器 人工神经网络 
Endurance characteristics of phase change memory cells被引量：1
《Journal of Semiconductors》2016年第5期65-68,共4页霍如如 蔡道林 陈邦明 陈一峰 王玉婵 王月青 魏宏阳 王青 夏洋洋 高丹 宋志棠 
Project supported by the Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDA09020402);the National Key Basic Research Program of China(Nos.2013CBA01900,2010CB934300,2011CBA00607,2011CB932804);the National Integrate Circuit Research Program of China(No.2009ZX02023-003);the National Natural Science Foundation of China(No.61176122,61106001,61261160500,61376006);the Science and Technology Council of Shanghai(Nos.12nm0503701,13DZ2295700,12QA1403900,13ZR1447200,14ZR1447500)
The endurance characteristics of phase change memory are studied. With operational cycles, the resis- tances of reset and set states gradually change to the opposite direction. What is more, the operational conditions...
关键词：phase change memory endurance  compositional change threshold voltage 
DOIND： a technique for leakage reduction in nanoscale domino logic circuits被引量：2
《Journal of Semiconductors》2016年第5期69-77,共9页Ambika Prasad Shah Vaibhav Neema Shreeniwas Daulatabad 
A novel DOIND logic approach is proposed for domino logic, which reduces the leakage current with a minimum delay penalty. Simulation is performed at 70 nm technology node with supply voltage 1V for domino logic and D...
关键词：deep submicron DOIND logic domino logic EVALUATION precharge subthreshold leakage 
A Phase Change Memory Chip Based on Ti Sb Te Alloy in 40-nm Standard CMOS Technology被引量：2
《Nano-Micro Letters》2015年第2期172-176,共5页Zhitang Song Yi Peng Zhan Daolin Cai Bo Liu Yifeng Chen Jiadong Ren 
supported by the‘‘Strategic Priority Research Program’’of the Chinese Academy of Sciences(XDA09020402);National Key Basic Research Program of China(2013CBA01900,2010CB934300,2011CBA00607,2011CB932804);National Integrate Circuit Research Program of China(2009ZX02023-003);National Natural Science Foundation of China(61176122,61106001,61261160500,61376006);Science and Technology Council of Shanghai(12nm0503701,13DZ2295700,12QA1403900,13ZR1447200,14ZR1447500)
In this letter, a phase change random access memory(PCRAM) chip based on Ti0.4Sb2Te3 alloy material was fabricated in a 40-nm 4-metal level complementary metal-oxide semiconductor(CMOS) technology. The phase change re...
关键词：PCRAM Ti0.4Sb2Te3alloy CMOS NMOS 
Thermal effect of Ge_2Sb_2Te_5 in phase change memory device
《Chinese Physics B》2014年第8期121-124,共4页李俊焘 刘波 宋志棠 任堃 朱敏 徐佳 任佳栋 冯高明 任万春 童浩 
Project supported by the National Basic Research Program of China(Grant Nos.2010CB934300,2011CBA00607,and 2011CB9328004);the National Integrate Circuit Research Program of China(Grant No.2009ZX02023-003);the National Natural Science Foundation of China(Grant Nos.60906004,60906003,61006087,61076121,61176122,and 61106001);the Funds from the Science and Technology Council of Shanghai,China(Grant No.12nm0503701)
In the fabrication of phase change random access memory （PRAM） devices, high temperature thermal processes are inevitable. We investigate the thermal stability of GezSb2Te5 （GST） which is a prototypical phase chan...
关键词：phase change memory Ge2Sb2Te5 thermal effect failure analysis 
Chemical mechanical planarization of Ge_2Sb_2Te_5 using IC1010 and Politex reg pads in acidic slurry被引量：1
《Chinese Physics B》2014年第8期177-182,共6页何敖东 刘波 宋志棠 王良咏 刘卫丽 冯高明 封松林 
Project supported by the National Basic Research Program of China(Grant Nos.2010CB934300,2013CBA01900,2011CBA00607,and 2011CB9328004);the "Strategic Priority Research Program" of the Chinese Academy of Sciences(Grant No.XDA09020402);the Fund from the Science and Technology Council of Shanghai,China(Grant No.13DZ2295700);the Science Fund from the Chinese Academy of Sciences(Grant No.20110490761);the National Natural Science Foundation of China(Grant Nos.61076121,61176122,and 61106001)
In the paper, chemical mechanical planarization （CMP） of Ge2 Sb2Te5 （GST） is investigated using IC 1010 and Politex reg pads in acidic slurry. For the CMP with blank wafer, it is found that the removal rate （RR）...
关键词：Ge2Sb2Te5 CMP polishing pad 
Mechanism of amorphous Ge_2Sb_2Te_5 removal during chemical mechanical planarization in acidic H_2O_2 slurry
《Chinese Physics B》2013年第1期547-551,共5页何敖东 宋志棠 刘波 钟旻 王良咏 吕业刚 封松林 
Project supported by the National Basic Research Program of China (Grant Nos. 2010CB934300, 2011CBA00607, and 2011CB9328004);the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003);the National Natural Science Foundation of China (Grant Nos. 60906004, 60906003,61006087, 61076121, 61176122, and 61106001);the Science and Technology Council of Shanghai, China (Grant Nos. 11DZ2261000 and 11QA1407800);the Chinese Academy of Sciences (Grant No. 20110490761)
In this paper, chemical mechanical planarization （CMP） of amorphous Ge2Sb2Te5 （a-GST） in acidic H2O2 slurry is investigated. It was found that the removal rate of a-GST is strongly dependent on H2O2 concentration ...
关键词：H2O2 chemical mechanical planarization Ge2Sb2Te5 
Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material被引量：1
《Chinese Physics B》2012年第11期335-339,共5页任万春 刘波 宋志棠 向阳辉 王宗涛 张北超 封松林 
Project supported by the National Basic Research Program of China (Grant Nos.2010CB934300,2011CBA00607,and 2011CB932800);the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003);the National Natural Science Foundation of China (Grant Nos. 60906004,60906003,61006087,and 61076121);the Science and Technology Council of Shanghai,China (Grant No. 1052nm07000)
Ge2Sb2Te5 gap filling is one of the key processes for phase-change random access memory manufacture. Physical vapor deposition is the mainstream method of Ge2Sb2Te5 film deposition due to its advantages of film qualit...
关键词：deposit-etch deposit process single step deposit gap filling RE-DEPOSITION 
Sb Rich Ge_(2)Sb_(5)Te_(5) Alloy for High-Speed Phase Change Random Access Memory Applications
《Chinese Physics Letters》2012年第10期221-223,共3页ZHANG Qi SONG San-Nian XU Feng 
Supported by the National Basic Research Program of China(2010CB934300,2011CBA00607,2011CB932800);the National Integrate Circuit Research Program of China(2009ZX02023-003);the National Natural Science Foundation of China(60906003,60906004,61006087,61076121,61106055).
Sb rich Ge_(2)Sb_(5)Te_(5) materials are investigated for use as the storage medium for high-speed phase change memory(PCM).Compared with conventional Ge2Sb2Te5,Ge_(2)Sb_(5)Te_(5) films have a higher crystallisation t...
关键词：resistance FASTER RETENTION 
Germanium Nitride as a Buffer Layer for Phase Change Memory
《Chinese Physics Letters》2012年第10期171-173,共3页ZHANG Xu LIU Bo PENG Cheng RAO Feng ZHOU Xi-Lin SONG San-Nian WANG Liang-Yong CHENG Yan WU Liang-Cai YAO Dong-Ning SONG Zhi-Tang FENG Song-Lin 
Supported by the National Basic Research Program of China(2010CB934300,2011CBA00607,2011CB932800);the National Integrate Circuit Research Program of China(2009ZX02023-003);the National Natural Science Foundation of China(60906004,60906003,61006087,61076121);the Science and Technology Council of Shanghai(1052nm07000).
The results of adhesion improvement and SET-RESET operation voltage reduction for the GeN buffer layer are presented.It is found that the adhesive strength between the Ge_(2)Sb_(2)Te_(5)(GST)layer and the layer below ...
关键词：STRENGTH LAYER THICK 
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