云南高校图书馆联盟文献共享服务平台- 国家自然科学基金(61106106)

国家自然科学基金(61106106): 作品数：30被引量：29H指数：2; 导出分析报告; 相关作者：蒲石杜林郝跃马晓华张得玺更多>>; 相关机构：西安电子科技大学中国空间技术研究院教育部更多>>; 相关期刊：《Chinese Physics B》《电子器件》《Science China(Technological Sciences)》《西安电子科技大学学报》更多>>; 相关主题：ALGAN/GANALGAN/GAN_HEMTSHIGH_ELECTRON_MOBILITY_TRANSISTORSHEMTSDRAIN更多>>; 相关领域：电子电信理学电气工程轻工技术与工程更多>>

Photoresponse and trap characteristics of transparent AZO-gated AlGaN/GaN HEMT: 《Chinese Physics B》2016年第10期525-528,共4页王冲赵梦荻何云龙郑雪峰张坤魏晓晓毛维马晓华张进成郝跃; supported by the National Natural Science Foundation of China(Grant Nos.61574110,61574112,and 61106106); AZO-gated and Ni/Au-gated AlGaN/GaN HEMTs are fabricated successfully,and an excellent transparency of AZOgated electrode is achieved.After a negative gate bias stress acts on two kinds of the devices,their photorespo...; 关键词：ALGAN/GAN HEMT AZO TRAP

Effects of the fluorine plasma treatment on low-density drain AlGaN/GaN HEMT: 《Journal of Semiconductors》2016年第6期92-96,共5页王冲魏晓晓何云龙郑雪峰马晓华张进成郝跃; supported by the National Natural Science Foundation of China(Nos.61334002,61106106,61474091);the Fundamental Research Funds for the Central Universities(Nos.K5051325004,K5051325002); Low-density drain high-electron mobility transistors（LDD-HEMTs） with different F plasma treatment were investigated by simulations and experiments.The LDD region was performed by introducing negatively charged fluor...; 关键词：AlGaN/GaN HEMT LDD fluorine plasma treatment

Distribution of electron traps in SiO_2/HfO_2 nMOSFET: 《Chinese Physics B》2016年第5期363-368,共6页侯晓慧郑雪峰王奥琛王颖哲文浩宇刘志镜李小炜吴银河; Project supported by the National Natural Science Foundation of China(Grant Nos.61334002,61106106,and 61474091);the New Experiment Development Funds for Xidian University,China(Grant No.SY1434);the Scientific Research Foundation for the Returned Overseas Chinese Scholars,State Education Ministry,China(Grant No.JY0600132501); In this paper, the principle of discharge-based pulsed I–V technique is introduced. By using it, the energy and spatial distributions of electron traps within the 4-nm HfO_2 layer have been extracted. Two peaks are o...; 关键词：energy and spatial distribution electron trap HFO2

大功率P沟道VDMOS器件设计与工艺仿真被引量：2: 《重庆大学学报（自然科学版）》2016年第4期133-138,共6页蒲石杜林张得玺; 国家自然科学基金资助项目(61106106);中央高校基本科研业务费专项基金(K5051325002;K50511250008)~~; 作为现代电力电子核心器件之一的P沟道VDMOS(vertical double-diffuse,MOS)器件,一直以来由于应用领域狭窄而并未得到足够的研究。以P沟道VDMOS器件为研究对象,为一款击穿电压超过-200V的P沟道VDMOS设计了有源区的元胞结构及复合耐压终...; 关键词：P沟道VDMOS 击穿电压导通电阻阈值电压

Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor: 《Chinese Physics B》2016年第2期421-425,共5页罗俊赵胜雷宓珉瀚陈伟伟侯斌张进成马晓华郝跃; Project supported by the National Natural Science Foundation of China(Grant Nos.61334002,61106106,and 61204085); The effects of gate length L_G on breakdown voltage VBRare investigated in AlGaN/GaN high-electron-mobility transistors（HEMTs） with L_G= 1 μm^20 μm. With the increase of L_G, VBRis first increased, and then satura...; 关键词：A1GaN/GaN high-electron-mobility transistors （HEMTs） breakdown voltage gate length

一种新型P沟道VDMOS复合耐压终端被引量：2: 《西安电子科技大学学报》2015年第6期70-74,共5页蒲石杜林张得玺; 国家重大科技专项资助项目(2008ZX01002-002);国家自然科学基金资助项目(61106106);中央高校基本科研业务费专项资金资助项目(K50511250008;K5051325002); 针对终端结构耐压的提高,研究了高压P沟道垂直导电双扩散型场效应晶体管的场限环和场板复合耐压终端结构,提出了一种采用单N+偏移区场限环和多级场板复合的耐压终端结构.仿真发现,该结构能更有效地改善器件主结的边缘电场分布,从而提高...; 关键词：P沟道垂直导电双扩散型场效应晶体管终端结构场限环 N+偏移区多级场板

Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors被引量：1: 《Chinese Physics B》2015年第11期460-463,共4页罗俊赵胜雷宓珉瀚侯斌杨晓蕾张进成马晓华郝跃; supported by the National Natural Science Foundation of China(Grant Nos.61334002 and 61106106); Frequency-dependent conductance measurements were carried out to investigate the trap states induced by reactive ion etching in A1GaN/GaN high-electron-mobility transistors （HEMTs） quantitatively. For the non-recess...; 关键词：AlGaN/GaN high-electron mobility transistors （HEMTs） ANNEALING reactive ion etching trapstates

Recovery of PMOSFET NBTI under different conditions被引量：1: 《Chinese Physics B》2015年第9期484-488,共5页曹艳荣杨毅曹成何文龙郑雪峰马晓华郝跃; Project supported by the National Basic Research Program of China(Grant No.2011CBA00606);the National Natural Science Foundation of China(Grant Nos.61404097,61334002,61106106,and 61176130);the Fundamental Research Funds for the Central Universities,China(Grant No.JB140415); Negative bias temperature instability（NBTI） has become a serious reliability issue, and the interface traps and oxide charges play an important role in the degradation process. In this paper, we study the recovery o...; 关键词：negative bias temperature instability（NBTI） P-type metal–oxide–semiconductor field effect transistor RECOVERY

深刻蚀方法对硅基SIWF通孔显微结构的影响被引量：2: 《西安电子科技大学学报》2015年第4期41-46,共6页杜林蒲石史永贵张进城郝跃; 国家自然科学基金资助项目(61106106);中央高校基本科研业务费专项资金资助项目(K5051325002); 硅基集成波导滤波器通孔的显微结构和阵列精度对硅基集成波导滤波器的电磁性能和可靠性至关重要.采用KOH溶液刻蚀、皮秒紫外激光刻蚀以及感应耦合等离子体刻蚀3种方法在晶向为[100]的高阻硅单晶衬底上加工了通孔阵列,并采用线宽测量仪...; 关键词：基片集成波导滤波器通孔深刻蚀显微结构

Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors被引量：1: 《Chinese Physics B》2015年第3期332-335,共4页张鹏赵胜雷侯斌王冲郑雪峰马晓华张进成郝跃; supported by the Key Program of the National Natural Science Foundation of China(Grant No.61334002);the Young Scientists Fund of the National Natural Science Foundation of China(Grant Nos.61404100 and 61106106); We present an AlGaN/GaN high-electron mobility transistor（HEMT） device with both field plate（FP） and lowdensity drain（LDD）. The LDD is realized by the injection of negatively charged fluorine（F-） ions under lo...; 关键词：GAN high-electron mobility transistors FLUORINE electric field

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