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国家自然科学基金(90607022): 作品数：13被引量：41H指数：4; 导出分析报告; 相关作者：刘明龙世兵谢常青管伟华胡媛更多>>; 相关机构：中国科学院微电子研究所兰州大学安徽大学中国工程物理研究院更多>>; 相关期刊：《微纳电子技术》《Journal of Semiconductors》《Chinese Physics B》《Science Bulletin》更多>>; 相关主题：存储器ORGANIC有机场效应晶体管SOLAR_CELL非易失性存储器更多>>; 相关领域：电子电信自动化与计算机技术理学电气工程更多>>

Advancements in organic nonvolatile memory devices: 《Chinese Science Bulletin》2011年第30期3178-3190,共13页LIU Xin JI ZhuoYu LIU Ming SHANG LiWei LI DongMei DAI YueHua; supported by the National Basic Research Program of China (2011CB808404, 2009CB939703);the National Natural Science Foundation of China (60825403, 90607022, and 61001043); As one of the most promising candidates for next generation storage media, organic memory devices have aroused worldwide research interest in both academia and industry. In recent years, organic memories have experien...; 关键词：非易失性存储器设备存储介质记忆体候选人工业界学术界商品化

Optimization of Al_2O_3/SiN_x stacked antireflection structures for N-type surface-passivated crystalline silicon solar cells被引量：1: 《Journal of Semiconductors》2011年第9期58-61,共4页吴大卫贾锐丁武昌陈晨武德起陈伟李昊峰岳会会刘新宇; Project supported by the State Key Development Program for Basic Research of China(Nos.2006CB604904,2009CB939703);the National Natural Science Foundation of China(Nos.60706023,60676001,90401002,90607022);the Chinese Academy of Sciences(No.YZ0635);the Chinese Academy of Solar Energy Action Plan; In the case of N-type solar cells,the anti-reflection property,as one of the important factors to further improve the energy-conversion efficiency,has been optimized using a stacked Al_2O_3/SiN_x layer.The effect of S...; 关键词：antireflection coatings aluminum oxide silicon nitride simulation solar cells

γ radiation caused graphene defects and increased carrier density被引量：4: 《Chinese Physics B》2011年第8期288-292,共5页韩买兴姬濯宇商立伟陈映平王宏刘欣李冬梅刘明; Project partially supported by the National Basic Research Program of China (Grant Nos.2011CB808404 and 2009CB939703);the National Natural Science Foundation of China (Grant Nos.60825403,90607022,and 61001043); We report on a micro-Raman investigation of inducing defects in mono-layer, hi-layer and tri-layer graphene by γ ray radiation. It is found that the radiation exposure results in two-dimensional （2D） and G band pos...; 关键词：graphene γ ray radiation Raman spectrum DEFECTS

Top contact organic field effect transistors fabricated using a photolithographic process: 《Chinese Physics B》2011年第8期389-393,共5页王宏姬濯宇商立伟刘兴华彭应全刘明; Project supported by the National Basic Research Program of China (Grant Nos. 2011CB808404 and 2009CB939703);the National Natural Science Foundation of China (Grant Nos. 10974074,90607022,60676001,60676008,and 60825403); This paper proposes an effective method of fabricating top contact organic field effect transistors by using a pho- tolithographic process. The semiconductor layer is protected by a passivation layer. Through photolit...; 关键词：organic field effect transistors top contact photolithographic

Antireflection properties and solar cell application of silicon nanoscructures: 《Journal of Semiconductors》2011年第8期55-60,共6页岳会会贾锐陈晨丁武昌武德起刘新宇; Project supported by the State Key Development Program for Basic Research of China(Nos.2006CB604904,2009CB939703);the National Natural Science Foundation of China(Nos.60706023,90401002,60977050,90607022);the Chinese Academy of Solar Energy Action Plan(No.YZ0635); Silicon nanowire arrays（SiNWAs） are fabricated on polished pyramids of textured Si using an aqueous chemical etching method.The silicon nanowires themselves or hybrid structures of nanowires and pyramids both show s...; 关键词：antireflection properties silicon nanowires solar cells PASSIVATION

Nonvolatile memory devices based on organic field-effect transistors被引量：1: 《Chinese Science Bulletin》2011年第13期1325-1332,共8页WANG Hong PENG YingQuan JI ZhuoYu LIU Ming SHANG LiWei LIU XingHua; supported by the National Basic Research Program of China (2011CB808404 and 2009CB939703);the National Natural Science Foundation of China (10974074,90607022,60676001,60676008 and 60825403); Among the many possible device configurations for organic memory devices,organic field-effect transistor (OFET) memory is an emerging technology with the potential to realize lightweight,low-cost,flexible charge stora...; 关键词：有机场效应晶体管非易失性存储器设备配置聚合物驻极体存储介质内存记忆体重量轻

Fabrication of a 256-bits organic memory by soft x-ray lithography被引量：1: 《Chinese Physics B》2010年第5期499-504,共6页刘兴华鲁闻生姬濯宇涂德钰朱效立谢常青刘明; Project supported by the State Key Development Program for Basic Research of China (Grant No. 2006CB806204);National Natural Science Foundation of China (Grant Nos. 60825403,90607022,60676001 and 60676008);Synchrotron Radiation Fund of Innovation Project of Ministry of Education of China (Grant No. 20070156S); This paper reports a procedure of soft x-ray lithography for the fabrication of an organic crossbar structure. Electron beam lithography is employed to fabricate the mask for soft x-ray lithography, with direct writin...; 关键词：molecular memory crossbar array soft x-ray lithography electron beam lithography

Advances in organic field-effect transistors and integrated circuits被引量：5: 《Science China(Technological Sciences)》2009年第11期3105-3116,共12页WANG Hong JI ZhuoYu LIU Ming SHANG LiWei LIU Ge LIU XingHua LIU Jiang PENG YingQuan; Supported by the National Basic Research Program of China ("973" Project) (Grant Nos. 2006CB806204, 2009CB939703);the National Natural Science Foundation of China (Grant Nos. 90607022, 60676001, 60676008, 60825403); Organic field-effect transistors (OFETs) have received significant research interest because of their promising applications in low cast, lager area, plastic circuits, and tremendous progress has been made in material...; 关键词：ORGANIC FIELD-EFFECT TRANSISTORS INTEGRATED CIRCUITS simulation of CIRCUITS

有机场效应晶体管及其集成电路研究进展被引量：1: 《中国科学（E辑）》2009年第9期1495-1505,共11页王宏姬濯宇刘明商立伟刘舸刘兴华柳江彭应全; 国家重点基础研究发展计划("973"计划)(批准号:2006CB806204);国家自然科学基金(批准号:90607022;60676001;60676008;60825403)项目资助; 有机场效应晶体管在低价、大面积、柔性电路中具有非常光明的应用前景,因而受到科学家们及工业界的广泛关注.近几年来,有机场效应晶体管在材料、器件性能及电路集成方面都取得了长足的进展.本文从有机场效应晶体管的材料、器件构筑、器...; 关键词：有机场效应晶体管集成电路电路仿真

基于I-V特性的阻变存储器的阻变机制研究被引量：11: 《微纳电子技术》2009年第3期134-140,153,共8页李颖弢刘明龙世兵刘琦张森王艳左青云王琴胡媛刘肃; 国家高技术研究发展计划(863计划)资助项目(2008AA031403);国家重点基础研究发展计划(973计划)资助项目(2006CB302706);国家自然科学基金资助项目(60825403,90607022,60506005); 随着器件尺寸的缩小,阻变存储器(RRAM)具有取代现有主流Flash存储器成为下一代新型存储器的潜力。但对RRAM器件电阻转变机制的研究在认识上依然存在很大的分歧,直接制约了RRAM的研发与应用。通过介绍阻变存储器的基本工作原理、不同的...; 关键词：阻变存储器非挥发性存储器 I-V特性阻变机制工作原理

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