云南高校图书馆联盟文献共享服务平台- 国家自然科学基金(60676008)

国家自然科学基金(60676008): 作品数：13被引量：14H指数：2; 导出分析报告; 相关作者：刘明陈军宁朱效立涂德钰商立伟更多>>; 相关机构：中国科学院微电子研究所安徽大学中国科学院更多>>; 相关期刊：《微细加工技术》《Journal of Semiconductors》《Science China(Technological Sciences)》《Chinese Physics B》更多>>; 相关主题：CIRCUITSORGANICOFETNVMCROSSBAR更多>>; 相关领域：电子电信理学机械工程自动化与计算机技术更多>>

A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications: 《Journal of Semiconductors》2012年第8期67-70,共4页张君宇王永刘璟张满红许中广霍宗亮刘明; Project supported by the National Basic Research Program of China(Nos.2010CB934204,2011CBA00600);the National Natural Science Foundation of China(Nos.60825403,60676008,60676061);the Hi-Tech Research and Development Program of China(Nos. 2008AA031403,2009AA03Z306); We introduce a novel 2 T P-channel nano-crystal memory structure for low power and high speed embedded non-volatile memory（NVM） applications.By using the band-to-band tunneling-induced hot-electron （BTBTIHE） injec...; 关键词：P-CHANNEL select transistor nano-crystal memory EMBEDDED

Top contact organic field effect transistors fabricated using a photolithographic process: 《Chinese Physics B》2011年第8期389-393,共5页王宏姬濯宇商立伟刘兴华彭应全刘明; Project supported by the National Basic Research Program of China (Grant Nos. 2011CB808404 and 2009CB939703);the National Natural Science Foundation of China (Grant Nos. 10974074,90607022,60676001,60676008,and 60825403); This paper proposes an effective method of fabricating top contact organic field effect transistors by using a pho- tolithographic process. The semiconductor layer is protected by a passivation layer. Through photolit...; 关键词：organic field effect transistors top contact photolithographic

Nonvolatile memory devices based on organic field-effect transistors被引量：1: 《Chinese Science Bulletin》2011年第13期1325-1332,共8页WANG Hong PENG YingQuan JI ZhuoYu LIU Ming SHANG LiWei LIU XingHua; supported by the National Basic Research Program of China (2011CB808404 and 2009CB939703);the National Natural Science Foundation of China (10974074,90607022,60676001,60676008 and 60825403); Among the many possible device configurations for organic memory devices,organic field-effect transistor (OFET) memory is an emerging technology with the potential to realize lightweight,low-cost,flexible charge stora...; 关键词：有机场效应晶体管非易失性存储器设备配置聚合物驻极体存储介质内存记忆体重量轻

Low voltage organic devices and circuits with aluminum oxide thin film dielectric layer被引量：2: 《Science China(Technological Sciences)》2011年第1期95-98,共4页SHANG LiWei JI ZhuoYu CHEN YingPin WANG Hong LIU Xin HAN MaiXin LIU Ming; supported by the National Basic Research Program of China ("973" Project)(Grant Nos.2009CB320302,2011CB808404);the Na-tional Natural Science Foundation of China (Grant Nos.60676001,60676008); Low voltage operating organic devices and circuits have been realized using atomic layer deposition deposited aluminum oxide thin film as dielectric layer. The dielectric film has per unit area capacitance of 165 nF/c...; 关键词：OFET low voltage atomic layer deposition Al2O3 thin film high-k dielectric

Fabrication of a 256-bits organic memory by soft x-ray lithography被引量：1: 《Chinese Physics B》2010年第5期499-504,共6页刘兴华鲁闻生姬濯宇涂德钰朱效立谢常青刘明; Project supported by the State Key Development Program for Basic Research of China (Grant No. 2006CB806204);National Natural Science Foundation of China (Grant Nos. 60825403,90607022,60676001 and 60676008);Synchrotron Radiation Fund of Innovation Project of Ministry of Education of China (Grant No. 20070156S); This paper reports a procedure of soft x-ray lithography for the fabrication of an organic crossbar structure. Electron beam lithography is employed to fabricate the mask for soft x-ray lithography, with direct writin...; 关键词：molecular memory crossbar array soft x-ray lithography electron beam lithography

Advances in organic field-effect transistors and integrated circuits被引量：5: 《Science China(Technological Sciences)》2009年第11期3105-3116,共12页WANG Hong JI ZhuoYu LIU Ming SHANG LiWei LIU Ge LIU XingHua LIU Jiang PENG YingQuan; Supported by the National Basic Research Program of China ("973" Project) (Grant Nos. 2006CB806204, 2009CB939703);the National Natural Science Foundation of China (Grant Nos. 90607022, 60676001, 60676008, 60825403); Organic field-effect transistors (OFETs) have received significant research interest because of their promising applications in low cast, lager area, plastic circuits, and tremendous progress has been made in material...; 关键词：ORGANIC FIELD-EFFECT TRANSISTORS INTEGRATED CIRCUITS simulation of CIRCUITS

Active layer self-protection process for organic field-effect transistors: 《Journal of Semiconductors》2009年第9期45-48,共4页刘舸刘明商立伟涂德钰刘兴华王宏柳江; Project supported by the State Key Development Program for Basic Research of China(No.2006CB806204);the National Natural Science Foundation of China(Nos.60676001,60676008); To isolate the active layer from air, double organic layer organic field-effect transistors have been fabricated, based on a two-step vacuum-deposition process. Pentacene acted as the active layer, and subsequently, C...; 关键词：OFET PENTACENE CUPC STABILITY

Study of top and bottom contact resistance in one organic field-effect transistor: 《Chinese Physics B》2009年第8期3530-3534,共5页刘舸刘明王宏商立伟姬濯宇刘兴华柳江; supported by National Basic Research Program of China (973 Program) (Grant No 2006CB806204);National Natural Science Foundation of China (Grant Nos 60676001,60676008 and 60825403); This paper reports that the organic field-effect transistors with hybrid contact geometry were fabricated, in which the top electrodes and the bottom electrodes were combined in parallel resistances within one transis...; 关键词：organic field-effect transistor top contact geometry bottom contact geometry hybrid contact geometry

硬X射线光子筛波导效应研究被引量：2: 《物理学报》2009年第11期8062-8066,共5页谢常青朱效立贾佳; 国家重点基础研究发展计划(批准号:2007CB935302);国家自然科学基金(批准号:60676008)资助的课题~~; 基于快速傅里叶变换光束传播法,研究了硬X射线光子筛中高高宽比金属结构的波导效应,确定了硬X射线光子筛的物理边界条件,采用角谱法计算了硬X射线光子筛的点扩展函数,并分析了吸收体厚度对聚焦性能的影响.研究结果表明波导效应一定程度...; 关键词：菲涅尔波带片硬X射线光子筛光束传播法角谱法

One-Time Programmable Metal-Molecule-Metal Device: 《Journal of Semiconductors》2008年第10期1928-1931,共4页商立伟刘明涂德钰甄丽娟刘舸; 国家自然科学基金(批准号:60676001,60676008,60236010,60290081);国家重点基础研究发展规划(批准号:2006CB806204)资助项目~~; A one-time programmable metal-molecule-metal device, with a modified Rotaxane LB film as the functional layer, is proposed for potential use in organic programmable and fault tolerant circuits like inorganic anti-fuse...; 关键词：molecular device FPGA ROTAXANE PROGRAMMABLE

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