云南高校图书馆联盟文献共享服务平台- 国家自然科学基金(60890191)

国家自然科学基金(60890191): 作品数：28被引量：20H指数：2; 导出分析报告; 相关作者：郝跃张进成刘新宇薛军帅魏珂更多>>; 相关机构：西安电子科技大学中国科学院微电子研究所工业和信息化部深圳市中兴物联科技有限公司更多>>; 相关期刊：《半导体技术》《Chinese Physics B》《物理学报》《科学通报》更多>>; 相关主题：ALGAN/GANALGAN/GAN_HEMTHEMTALGAN/GAN_HEMTSGAN更多>>; 相关领域：电子电信理学电气工程自动化与计算机技术更多>>

Point defect determination by photoluminescence and capacitance-voltage characterization in a GaN terahertz Gunn diode被引量：1: 《Chinese Physics B》2013年第8期563-567,共5页李亮杨林安周小伟张进成郝跃; supported by the National Natural Science Foundation of China(Grant Nos.61076079 and 61274092);the Doctoral Program Fund of the Ministry of Education of China(Grant No.20090203110012);the Major Program and State Key Program of the National Natural Science Foundation of China(GrantNo.60890191); Photoluminescence （PL） measurement is used to study the point defect distribution in a GaN terahertz Gunn diode, which is able to the degrade high-field transport characteristic during further device operation. PL, ...; 关键词：GaN terahertz Gunn diode point defect PHOTOLUMINESCENCE CAPACITANCE-VOLTAGE

中国互联网络基础设施发展综述被引量：1: 《电子科技》2013年第7期183-184,186,共3页曹慧海李原; 国家自然科学基金资助项目(60890191); 网络基础设施的建设直接影响到互联网性能的提升,进而影响到"宽带中国"战略和"宽带中国"工程的实施。文中针对近期我国互联网基础设施、互联互通带宽、国际网络、企业设施等方面的建设和发展,进行了整理和总结归纳。; 关键词：互联网骨干网基础设施宽带中国

Effect of varying layouts on the gate temperature for multi-finger AlGaN/GaN HEMTs: 《Journal of Semiconductors》2012年第9期60-64,共5页王建辉王鑫华庞磊陈晓娟金智刘新宇; supposed by the National Basic Research Program of China(No.2010CB327503);the National Natural Science Foundation of China(No.60890191); The impacts of varying layout geometries on the channel temperature of multi-finger AIGaN/GaN HEMTs are investigated by three-dimensional （3-D） thermal simulations. Micro-Raman thermography is selected to obtain a d...; 关键词：AlGaN/GaN HEMTs thermal simulation thermal boundary resistance thermal management Raman spectroscopy

斜切蓝宝石衬底MOCVD生长GaN薄膜的透射电镜研究被引量：2: 《物理学报》2012年第18期343-348,共6页林志宇张进成许晟瑞吕玲刘子扬马俊彩薛晓咏薛军帅郝跃; 国家重点基础研究发展计划(973计划)(批准号:2011CBA00600);国家科技重大专项(批准号:2008ZX01002-002);国家自然科学基金重大项目(批准号:60890191);中央高校基本科研业务费专项资金(批准号:K50511250002)~~; 利用MOCVD技术在斜切角度为0.3°的c面蓝宝石衬底上生长了非故意掺杂GaN薄膜,并采用透射电子显微镜对材料的质量和材料内部缺陷进行了分析.研究发现斜切蓝宝石衬底上外延的GaN材料中,位错在距离衬底0.8μm附近大量湮灭,同时位错扎堆出现...; 关键词：GaN 斜切衬底透射电子显微镜.位错

Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer被引量：1: 《Chinese Physics B》2012年第7期455-459,共5页张伟薛军帅周晓伟张月刘子阳张进成郝跃; Project supported by the National Key Science & Technology Special Project of China (Grant No. 2008ZX01002-002);the Major Program and State Key Program of National Natural Science Foundation of China (Grant No. 60890191); An A1GaN/GaN superlattice grown on the top of a GaN buffer induces the broadening of the full width at half maximum of （102） and （002） X-ray diffraction rocking curves. With an increase in the Si-doped concentrati...; 关键词：A1GAN/GAN SUPERLATTICE Si doping

A Ku band internally matched high power GaN HEMT amplifier with over 30%of PAE: 《Journal of Semiconductors》2012年第1期52-55,共4页Ge Qin Chen xiaojuan Luo Weijun Yuan Tingting Pu Yan Liu Xinyu; Project supported by the National Basic Research Program of China(No.2010CB327503);the National Natural Science Foundation of China(No.60890191); We report a high power Ku band internally matched power amplifier （IMPA） with high power added efficiency （PAE） using 0.3 μm A1GaN/GaN high electron mobility transistors （HEMTs） on 6H-SiC substrate. The intemal...; 关键词：KU-BAND A1GaN/GaN HEMTs IMPA output power PAE

The effects of proton irradiation on the electrical properties of NbAlO/AlGaN/GaN MIS-HEMT: 《Science China(Physics,Mechanics & Astronomy)》2012年第1期40-43,共4页BI ZhiWei FENG Qian ZHANG JinCheng LU Ling MAO Wei GU WenPing MA XiaoHua HAO Yue; supported by the State Key Program and Major Program of National Natural Science Foundation of China (Grant Nos. 60736033 and 60890191);the Fundamental Research Funds for the Central Universities (Grant No. JY10000925002); AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistors （MIS-HEMTs） with atomic layer deposited （ALD） NbA10 gate dielectric were investigated using 3 MeV proton irradiation at a fluence of 1015 ...; 关键词：AIGAN/GAN MIS-HEMT proton irradiation TRAP

The passivation mechanism of nitrogen ions on the gate leakage current of HfO_2/AlGaN/GaN MOS-HEMTs: 《Science China(Physics,Mechanics & Astronomy)》2011年第12期2170-2173,共4页BI ZhiWei HAO Yue FENG Qian JIANG TingTing CAO YanRong ZHANG JinCheng MAO Wei LU Ling ZHANG Yue; supported by the National Natural Science Foundation of China (Grant Nos.60736033,60890191);the Fundamental Research Funds for the Central Universities (Grant Nos.JY10000925002,JY10000-904009); In this paper, we systematically study the positive gate leakage current in AlGaN/GaN metal-oxide-semiconductor high electron-mobility transistors (MOS-HEMTs) with HfO 2 dielectric using atomic layer deposition (ALD)....; 关键词：ALGAN/GAN MOS-HEMT PASSIVATION gate leakage current nitrogen ions

Dispersion effect on the current voltage characteristic of AlGaN/GaN high electron mobility transistors: 《Chinese Physics B》2011年第9期396-402,共7页蒲颜庞磊陈晓娟袁婷婷罗卫军刘新宇; Project supported by the National Basic Research Program of China (Grant No.2010CB327503);the National Natural Science Foundation of China (Grant No.60890191); The current voltage （IV） characteristics are greatly influenced by the dispersion effects in A1GaN/CaN high electron mobility transistors. The direct current （DC） IV and pulsed IV measurements are performed to giv...; 关键词：dispersion effects pulsed current voltage measurement TRAP SELF-HEATING

A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier: 《Journal of Semiconductors》2011年第8期70-73,共4页戈勤陈晓娟罗卫军袁婷婷庞磊刘新宇; Project supported by the National Basic Research Program of China(No.2010CB327503);the National Natural Science Foundation of China(No.60890191); A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3μm AlGaN/GaN HEMT production process on a 2-inch diameter semi-insulating（SI） 4H-SiC substrate by MOCVD. Over the 12-1...; 关键词：KU-BAND AlGaN/GaN HEMTs power amplifier MONOLITHIC power density

高级检索 检索式检索

时间限定

期刊范围

学科限定全选

高级检索 检索式检索

时间限定

期刊范围

学科限定全选

国家自然科学基金(60890191)

检索结果分析

下载全文

高级检索检索式检索

时间限定

期刊范围

学科限定全选

高级检索 检索式检索

时间限定

期刊范围

学科限定全选

国家自然科学基金(60890191)

检索结果分析

下载全文

用户登录

高级检索检索式检索