云南高校图书馆联盟文献共享服务平台- 国家重点基础研究发展计划(2011CBA00606)

国家重点基础研究发展计划(2011CBA00606): 作品数：19被引量：21H指数：2; 导出分析报告; 相关作者：张钢刚郝跃马晓华何燕冬张凯更多>>; 相关机构：北京大学西安电子科技大学教育部更多>>; 相关期刊：《物理学报》《Science China(Information Sciences)》《北京大学学报（自然科学版）》《Chinese Physics B》更多>>; 相关主题：ALGAN/GANNBTIPMOSFETDEGRADATIONESD更多>>; 相关领域：电子电信电气工程理学自动化与计算机技术更多>>

Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure: 《Chinese Physics B》2016年第6期489-493,共5页朱青马晓华陈伟伟侯斌祝杰杰张濛陈丽香曹艳荣郝跃; Project supported by the National Key Basic Research Program of China(Grant No.2011CBA00606);the Program for New Century Excellent Talents in University,China(Grant No.NCET-12-0915);the National Natural Science Foundation of China(Grant Nos.61334002 and 61404097); Deep level transient spectroscopy（DLTS） as a method to investigate deep traps in AlGaN/GaN heterostructure or high electron mobility transistors（HEMTs） has been widely utilized.The DLTS measurements under differen...; 关键词：ALGAN/GAN hole-like traps DLTS surface states

Area-efficient transient power-rail electrostatic discharge clamp circuit with mis-triggering immunity in a 65-nm CMOS process被引量：2: 《Science China(Information Sciences)》2016年第4期108-116,共9页Yuan WANG Guangyi LU Haibing GUO Jian CAO Song JIA Xing ZHANG; supported by National Basic Research Program of China (Grant No. 2011CBA00606); A novel, area-efficient transient power-rail electrostatic discharge（ESD） clamp circuit is proposed in this work. Current-mirror capacitors are used to reduce the layout area. Logic threshold voltages of inverters a...; 关键词：electrostatic discharge（ESD） power-rail clamp circuit transmission line pulse（TLP） current mirror mis-triggering

A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT被引量：3: 《Chinese Physics B》2015年第10期438-442,共5页郑佳欣马晓华卢阳赵博超张宏鹤张濛曹梦逸郝跃; Project supported by the National Key Basic Research Program of China(Grant No.2011CBA00606);Program for New Century Excellent Talents in University,China(Grant No.NCET-12-0915);the National Natural Science Foundation of China(Grant No.61334002); A C-band high efficiency and high gain two-stage power amplifier based on A1GaN/GaN high electron mobility transistor （HEMT） is designed and measured in this paper. The input and output impedances for the optimum po...; 关键词：AIGaN/GaN HEMT high power-added efficiency amplifier microwave and millimeterwave de- vices and circuits load pull

A novel diode string triggered gated-Pi N junction device for electrostatic discharge protection in 65-nm CMOS technology被引量：1: 《Chinese Physics B》2015年第10期594-598,共5页张立忠王源陆光易曹健张兴; Project supported by the National Basic Research Program of China(Grant No.2011CBA00606); A novel diode string-triggered gated-Pi N junction device, which is fabricated in a standard 65-nm complementary metal-oxide semiconductor（CMOS） technology, is proposed in this paper. An embedded gated-Pi N junction...; 关键词：electrostatic discharge （ESD） gated-PiN junction diode string parasitic resistance redistribution

Recovery of PMOSFET NBTI under different conditions被引量：1: 《Chinese Physics B》2015年第9期484-488,共5页曹艳荣杨毅曹成何文龙郑雪峰马晓华郝跃; Project supported by the National Basic Research Program of China(Grant No.2011CBA00606);the National Natural Science Foundation of China(Grant Nos.61404097,61334002,61106106,and 61176130);the Fundamental Research Funds for the Central Universities,China(Grant No.JB140415); Negative bias temperature instability（NBTI） has become a serious reliability issue, and the interface traps and oxide charges play an important role in the degradation process. In this paper, we study the recovery o...; 关键词：negative bias temperature instability（NBTI） P-type metal–oxide–semiconductor field effect transistor RECOVERY

Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress: 《Chinese Physics B》2014年第11期496-501,共6页曹艳荣何文龙曹成杨毅郑雪峰马晓华郝跃; supported by the National Basic Research Program of China(Grant No.2011CBA00606);the National Natural Science Foundation of China(Grant Nos.61334002,61106106,and 61176130);the Fundamental Research Fund for the Central Universities of China(Grant No.JB140415); The influence of PMOSFET gate length on the parameter degradation relations under negative bias temperature insta- bility （NBTI） stress is studied. The threshold voltage degradation increases with reducing the gate ...; 关键词：negative bias temperature instability （NBTI） gate length DEGRADATION

Resistive switching characteristics of Ti/ZrO_2/Pt RRAM device被引量：2: 《Chinese Physics B》2014年第11期507-511,共5页雷晓艺刘红侠高海霞杨哈妮王国明龙世兵马晓华刘明; supported by the National Basic Research Program of China(Grant No.2011CBA00606);the National Natural Science Foundation of China(Grant Nos.61106106,11304237,61376099,and 11235008);the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant Nos.20130203130002 and 20110203110012); In this paper, the bipolar resistive switching characteristic is reported in Ti/ZrO2/Pt resistive switching memory de- vices. The dominant mechanism of resistive switching is the formation and rupture of the conductiv...; 关键词：resistive random access memory （RRAM） resistive switching （RS） conductive filament （CF） compliance current

纳米尺度超低漏电ESD电源钳位电路研究被引量：2: 《北京大学学报（自然科学版）》2014年第4期595-599,共5页王源张雪琳曹健陆光易贾嵩张钢刚; 国家重点基础研究发展计划(2011CBA00606);国家自然科学基金青年基金(61106101)资助; 提出一种新型超低漏电ESD电源钳位电路。该电路采用具有反馈回路的ESD瞬态检测电路,能够减小MOS电容栅极–衬底之间电压差,降低电路的泄漏电流,抑制ESD泄放器件的亚阈值电流。65 nm CMOS工艺仿真结果表明,在电路正常上电时,泄漏电流只有...; 关键词：静电放电泄漏电流电源钳位电路亚阈值电流

SOI高压器件热载流子退化研究(英文): 《北京大学学报（自然科学版）》2014年第4期632-636,共5页韩临何燕冬张钢刚; 国家重点基础研究发展计划(2011CBA00606)资助; 提出一种可以表征STI型LDMOS器件各个区域界面陷阱密度分布的测试方法——MR-DCIV,利用该方法得到包括LDMOS器件的沟道区、积累区和漂移区在内的LDMOS器件界面陷阱密度在多种热载流子应力条件下的产生退化规律。针对界面陷阱的位置对LD...; 关键词：高压横向扩散场效应晶体管多区域直流电压电流技术界面态热载流子退化

高k栅介质SOI nMOSFET正偏压温度不稳定性的实验研究(英文): 《北京大学学报（自然科学版）》2014年第4期637-641,共5页李哲吕垠轩何燕冬张钢刚; 国家重点基础研究发展计划(2011CBA00606)资助; 对高k栅介质SOI nMOSFET器件的PBTI退化和恢复进行实验研究,并且与pMOSFET器件的NBTI效应进行比较,分析PBTI效应对阈值电压漂移、线性及饱和漏电流、亚阈摆幅和应力诱导漏电流的影响。结果显示,PBTI的退化和恢复与NBTI效应具有相似的趋...; 关键词：正偏置温度不稳定性(PBTI) 高介电常数栅介质绝缘衬底上的硅型金属氧化层半导体场效应晶体管(soI MOSFET) 退化应力诱导漏电流(SILC)

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