National Natural Science Foundation of China(61025021,60936002,51072089,51372130);National Key Project of Science and Technology(2011ZX02403-002);Natural Science Foundation of Beijing(NSF 3111002)
supported by National Natural Science Foundation(Grant Nos.61025021,60936002,61020106006);National Key Project of Science and Technology of China(Grant Nos.2009ZX02023-001-3,2011ZX02403-002)
Magnetic simulation method is introduced to analyze giant magnetoresistances (GMRs) in nanoscale for nano-sized biosensors. A spin valve model with special gridding corresponding to the exchange interaction length i...
Supported by the National Natural Science Foundation of China(61025021,60936002,and 61020106006);the National Key Project of Science and Technology(2011ZX02403-002).
Flexible arrays based on the flexible connection of double layers are demonstrated.Flexible sensor arrays are highly desired for many applications.Conventional flexible electronics are implemented by directly fabricat...
financially supported by the National Natural Science Foundation of China (Nos. 61025021and 60936002);the National Key Project of Scienceand Technology of China (Nos. 2009ZX02023-001-3 and 2011ZX02403-002);the Independent Scientific Research of Tsinghua University (No. 2010THZ0)
The magnetoresistance behavior and the magnetization reversal mode of NiFe/Cu/CoFe/IrMn spin valve giant magnetoresistance (SV-GMR) in nanoscale were investigated experimentally and theoretically by nanosized magnet...
Supported by the National Natural Science Foundation(61025021,60936002);the National Key Project of Science and Technology of China(2009ZX02023-001,2011ZX02403-002).
Based on the metal-oxide-semiconductor field effect transistor(MOSFET)stress sensitive phenomenon,a low power MOSFET pressure sensor is proposed.Compared with the traditional piezoresistive pressure sensor,the present...
Supported by the National Natural Science Foundation of China(Nos. 61025021, 60936002, 60729308, 61011130296, and 61020106006);the National Key Projects of Science and Technology of China (No. 2009ZX02023-001-3)
Traditional planar inductors in Radio Frequency (RF) Integrated Circuits (ICs) are plagued by large areas, low quality, and low frequencies. This paper describes a magnetic-based CMOS-compatible RF in- ductor. Mag...