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国家自然科学基金(90207004): 作品数：23被引量：21H指数：2; 导出分析报告; 相关作者：黄如张兴陈宝钦王阳元刘明更多>>; 相关机构：北京大学中国科学院微电子研究所更多>>; 相关期刊：《电子器件》《固体电子学研究与进展》《Journal of Semiconductors》《北京大学学报（自然科学版）》更多>>; 相关主题：NMHALOSOURCENISI超薄栅介质更多>>; 相关领域：电子电信一般工业技术理学自动化与计算机技术更多>>

Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation被引量：1: 《Chinese Physics B》2010年第11期597-603,共7页薛守斌黄如黄德涛王思浩谭斐王健安霞张兴; Project supported by the National Natural Science Foundation of China (Grants No. 60625403,60836004,60925015 and 90207004);the Major State Basic Research Development Program of China (973 Program) (Grant No. 2006CB302701); This paper mainly reports the permanent impact of displacement damage induced by heavy-ion strikes on the deepsubmicron MOSFETs. Upon the heavy ion track through the device, it can lead to displacement damage, includi...; 关键词：CMOS devices displacement damage heavy ion irradiation gamma ray irradiation

Challenges of 22 nm and beyond CMOS technology被引量：8: 《Science in China(Series F)》2009年第9期1491-1533,共43页HUANG Ru WU HanMing KANG JinFeng XIAO DeYuan SHI XueLong AN Xia TIAN Yu WANG RunSheng ZHANG LiangLiang ZHANG Xing WANG YangYuan; the National Natural Science Foundation of China (Grant Nos. 60625403, 90207004);the National Basic Research Program of China (Grant No. 2006CB302701); It is predicted that CMOS technology will probably enter into 22 nm node around 2012. Scaling of CMOS logic technology from 32 to 22 nm node meets more critical issues and needs some significant changes of the technol...; 关键词：CMOS technology 22 nm technology node device architectures metal gate^high K dielectrics ultra low K dielectrics

CIF格式转换为PG3600格式中任意多边形切割成矩形的算法研究(英文): 《电子器件》2008年第2期385-388,共4页李金儒陈宝钦刘明赵珉; 国家自然科学基金资助(60236010,90207004,60290081,90401002,60276019);自然科研基金项目资助(G2000036504,2002CB31190,2002AA325040); 为了编制能够运行于Windows操作系统且又能够挂靠在L-EDIT数据格式转换软件,文章提出了微光刻图形CIF数据格式转换为PG3600数据格式的新的图形切割算法——沿边切割法,重点讨论任意多边形切割成矩形的具体算法,并与其它几种常见的切割...; 关键词：数据格式转换任意多边形切割法 CIF 算法 WINDOWS操作系统矩形软件运行

Halo注入角度对热载流子效应的影响及优化被引量：2: 《固体电子学研究与进展》2007年第1期130-133,共4页王兵冰汪洋黄如张兴; 国家自然科学基金资助项目(90207004); 通过模拟和实验研究了不同的halo注入角度的NMOSFET,研究发现halo的注入角度越大,热载流子效应的退化越严重。考虑到由于热载流子的注入造成栅氧化层损伤,使器件可靠性变差,halo注入时应该采用小的倾角注入。; 关键词：HALO 热载流子效应短沟效应漏感应势垒降低效应 N型金属-氧化物-半导体场效应晶体管

Sub-100 nm NMOS Halo工艺优化分析被引量：4: 《固体电子学研究与进展》2006年第4期445-449,共5页汪洋王兵冰黄如张兴; 国家自然科学基金资助项目(90207004); 短沟道效应是MOS器件特征尺寸进入Sub-100nm后必须面对的关键挑战之一。Halo结构能够有效地抑制短沟道效应,合理的Halo区掺杂分布会极大地改善小尺寸器件性能。文中采用器件和工艺模拟工具ISE-TCAD研究形成Halo结构的工艺参数对器件性...; 关键词：HALO 短沟道效应离子注入掺杂分布

纳米电子器件及其集成: 《Journal of Semiconductors》2006年第z1期7-10,共4页刘明陈宝钦谢常青王丛舜龙世兵徐秋霞李志钢易里成荣涂德钰商立伟; 国家自然科学基金(批准号:60276019,90207004,60236010,60290081)和国家重点基础研究发展规划(批准号:2006CB302706)资助项目; 对基于Top-Down加工技术的纳米电子器件如:单电子器件、共振器件、分子电子器件等的研究现状、面临的主要挑战等进行了讨论.采用CMOS兼容的工艺成功地研制出单电子器件,观察到明显的库仑阻塞效应;在半绝缘GaAs衬底上制作了AlAs/GaAs/In0...; 关键词：自上而下的纳米加工纳米器件单电子器件共振器件

Field-effect Transistors Based on Single-wall Carbon Nanotubes Bundles: 《Chinese Journal of Electronics》2005年第4期599-602,共4页WANG Xiaofeng GUO Ao GUAN Lunhui SHI Zujin GU Zhennan FU Yunyi ZHANG Xing Huang Ru; his work is supported by the National Natural Science Foundation of China （No.90207004） and the State Key Foundamental Research Project （No.2000036501）.; The electric transport properties of Singlewalled carbon nanotubes （SWNT） bundles array have been measured. We report the fabrications and performances of nanoscale Field-effect transistors （FET） based on SWNT bun...; 关键词：Carbon nanotubes bundle Field-effect transistors AMBIPOLAR HYSTERESIS

Fabrication and Characteristics of SOI-Based Single-Electron Transistor with in-Plane Side Gates: 《Chinese Journal of Electronics》2005年第4期613-615,共3页LONG Shibing LI Zhigang WANG Congshun, LIU Ming CHEN Baoqin ZHAO Xinwei; This work is supported by the National Natural Science Foundation of China （No.60236010, 90207004, 60290081 and 90401002）.; For compatibility with CMOS technology, the Single-electron transistor （SET） is preferably made in silicon. In this paper, a Si-based SET with in-plane side gates is proposed, which is fabricated in a Silicon-oninsu...; 关键词：Single-electron transistor In-plane side gates Electron beam lithography Coulomb staircase Conductance oscillation

A Model of a Single Electron Transistor of Metallic Tunneling Junctions and Its Validation: 《Journal of Semiconductors》2005年第7期1323-1327,共5页张立辉李志刚康晓辉谢常青刘明; 国家自然科学基金资助项目(批准号:60290081,60276019,90207004)~~; Based on the orthodox theory,a model of a single electron transistor （SET） of metallic tunneling junctions is built using the master equation method. Several parameters of the device, such as capacitance, resistance...; 关键词：single electron transistor orthodox theory coulomb blockade quantum tunnelling

Fabrication of Ultrathin SiO_2 Gate Dielectric by Direct Nitrogen Implantation into Silicon Substrate: 《Journal of Semiconductors》2005年第2期266-270,共5页许晓燕程行之黄如张兴; 国家自然科学基金 (批准号 :90 2 0 70 0 4);国家重点基础研究专项基金 (批准号 :2 0 0 0 0 3 65 )资助项目~~; Nitrogen implantation in silicon substrate at fixed energy of 35keV and split dose of 10 14～5×10 14cm -2 is performed before gate oxidation.The experiment results indicate that with the increasing of implantation...; 关键词：ultrathin gate dielectric nitrogen implantation BREAKDOWN

国家自然科学基金(90207004)