云南高校图书馆联盟文献共享服务平台- INGAAS/INP

INGAAS/INP: 作品数：210被引量：371H指数：9; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：刘宝林刘新宇徐安怀梁焰齐鸣更多>>; 相关机构：中国科学院厦门大学中国科学院大学华东师范大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划福建省自然科学基金国家高技术研究发展计划更多>>

High photon detection efficiency InGaAs/InP single photon avalanche diode at 250 K被引量：4: 《Journal of Semiconductors》2022年第10期56-63,共8页Tingting He Xiaohong Yang Yongsheng Tang Rui Wang Yijun Liu; jointly supported by the National Key Research and Development Program of China (2019YFB22-05202);National Natural Science Foundation of China(61774152); Planar semiconductor InGaAs/InP single photon avalanche diodes with high responsivity and low dark count rate are preferred single photon detectors in near-infrared communication.However,even with well-designed struct...; 关键词：single period sinusoidal pulse InGaAs/InP single photon avalanche diode parallel balanced photon detection effi-ciency dark count rate noise-equivalent power

Optical properties of Zn-diffused InP layers for the planar-type InGaAs/InP photodetectors: 《Journal of Semiconductors》2017年第12期56-61,共6页Guifeng Chen Mengxue Wang Wenxian Yang Ming Tan Yuanyuan Wu Pan Dai Yuyang Huang Shulong Lu; Project supported by the Key R&D Program of Jiangsu Province(No.BE2016085);the National Natural Science Foundation of China(Nos.61674051);the External Cooperation Program of BIC,Chinese Academy of Sciences(No.121E32KYSB20160071); Zn diffusion into InP was carried out ex-situ using a new Zn diffusion technique with zinc phosphorus particles placed around InP materials as zinc source in a semi-closed chamber formed by a modified diffusion furnac...; 关键词：Zn diffusion SEMI-CLOSED InGaAs/InP PIN photodetectors photoluminescence （PL） dark current RESPONSIVITY

A 75 GHz regenerative dynamic frequency divider with active transformer using InGaAs/InP HBT technology: 《Journal of Semiconductors》2017年第8期55-60,共6页Xi Wang Bichan Zhang Hua Zhao Yongbo Su Asif Muhammad Dong Guo Zhi Jin; This letter presents a high speed 2 ： 1 regenerative dynamic frequency divider with an active transformer fabricated in 0.7μm InP DHBT technology with fTof 165 GHz and fmax of 230 GHz. The circuit includes a two-sta...; 关键词：INP hetero-junction bipolar transistors dynamic frequency divider

High-responsivity 40 Gbit/s InGaAs/InP PIN photodetectors integrated on silicon-on-insulator waveguide circuits被引量：1: 《Journal of Semiconductors》2016年第11期54-59,共6页尹冬冬何婷婷韩勤吕倩倩张冶金杨晓红; Project supported by the High-Tech Research and Development Program of China(Nos.2015AA016904,2015AA012302);the National Basic Research Program of China(Nos.2012CB933503,2013CB932904);the National Natural Foundation of China(Nos.61274069,61176053,61021003,61435002); This paper presents a high-responsivity and high-speed InGaAs/InP PIN photodetector integrated onto the silicon waveguide substrate utilizing the divinyltetramethyldisiloxane-benzocyclobutene （DVS-BCB） adhesive bond...; 关键词：integrated photodetectors BONDING silicon on insulator evanescent wave

A THz InGaAs/InP double heterojunction bipolar transistor with f_(max)=325 GHz and BV_(CBO)=10.6 V被引量：2: 《Journal of Semiconductors》2013年第5期76-78,共3页程伟王元赵岩陆海燕高汉超杨乃彬; A common-base four finger InGaAs/InP double heterostructure bipolar transistor （DHBT） has been designed and fabricated using triple mesa structure and planarization technology. All processes are on 3-inch wafers. Th...; 关键词：InP DHBT THZ high breakdown

High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with f_(max)=256 GHz and BV_(CEO)= 8.3 V被引量：3: 《Journal of Semiconductors》2012年第1期56-58,共3页Cheng Wei Zhao Yan Gao Hanchao Chen Chen Yang Naibin; An InGaAs/InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology. All processes are on 3-inch wafers. The DHBT with an emitter area of 1×15 ...; 关键词：INP double heterojunction bipolar transistor PLANARIZATION

An InGaAs/InP 40 GHz CML static frequency divider被引量：1: 《Journal of Semiconductors》2011年第3期127-130,共4页苏永波金智程伟葛霁王显泰陈高鹏刘新宇徐安怀齐鸣; Static frequency dividers are widely used as a circuit performance benchmark or figure-of-merit indicator to gauge a particular device technology’s ability to implement high speed digital and integrated high performa...; 关键词：INP DHBT static frequency divider

A Submicron InGaAs/InP Heterojunction Bipolar Transistor with f_t of 238GHz: 《Journal of Semiconductors》2008年第10期1898-1901,共4页金智程伟刘新宇徐安怀齐鸣; 国家高技术研究发展计划资助项目(批准号:2002CB311902)~~; A non-micro-air-bridge InP-based heterojunction bipolar transistor （HBT） is fabricated. A very small emitter side etching （〈100nm） is developed and makes a submicron InP-based HBT possible. The current gain cutof...; 关键词：lnP heterojunction bipolar transistor PLANARIZATION high frequency

A Planar InGaAs/InP Geiger Mode Avalanche Photodiode with Cascade Edge Breakdown Suppression: 《Journal of Semiconductors》2008年第9期1686-1691,共6页吴孟林峰杨富华曹延名; A Geiger mode planar InGaAs/InP avalanche photodiode （APD） with a cascade peripheral junction structure to suppress edge breakdowns is designed by finite-element analysis. The photodiode breakdown voltage is reduced...; 关键词：Geiger mode APD edge breakdown cascade junction breakdown voltage

A New Method for InGaAs/InP Composite Channel HEMTs Simulation: 《Journal of Semiconductors》2007年第11期1706-1711,共6页刘亮张海英尹军舰李潇徐静波宋雨竹刘训春; 国家重点基础研究发展规划资助项目(批准号:G2002CB311901)~~; A new method is used to simulate InGaAs/InP composite channel high electron mobility transistors （HEMTs）. By coupling the hydrodynamic model and the density gradient model, the electron density distribution in the c...; 关键词：InP INGAAS composite channel HEMTS SIMULATION

INGAAS/INP