supported by the National Natural Science Foundation of China(No.11074280);the Natural Science Foundation of Jiangsu Province,China(No.BK2012110);the Fundamental Research Funds for the Central Universities of China(No.JUSRP51323B);the Chinese Postdoctoral Science Foundation(No.2013M540437);the State Key Laboratory of ASIC and System(No.11KF003);the PAPD of Jiangsu Higher Education Institutions and the Summit of the Six Top Talents Program of Jiangsu Province(No.DZXX-053)
The typical light emission efficiency behaviors of InGaN/GaN multi-quantum well (MQW) blue light- emitting diodes (LEDs) grown on c-plane sapphire substrates are characterized by pulsed current operation mode in t...