云南高校图书馆联盟文献共享服务平台- 国家重点基础研究发展计划(2011CBA00607)

国家重点基础研究发展计划(2011CBA00607): 作品数：22被引量：18H指数：2; 导出分析报告; 相关作者：宋志棠饶峰封松林周夕淋吴良才更多>>; 相关机构：中国科学院上海新储集成电路有限公司浙江大学南京大学更多>>; 相关期刊：《Chinese Physics B》《物理学报》《Nano-Micro Letters》《微电子学》更多>>; 相关主题：相变存储器SBPCMTEAMORPHOUS更多>>; 相关领域：自动化与计算机技术电子电信理学金属学及工艺更多>>

非易失性突触存储阵列及神经元电路的设计被引量：2: 《微电子学与计算机》2017年第11期1-5,共5页叶勇亢勇景蔚亮杜源宋志棠陈邦明; 国家自然科学基金(61076121,61176122,61106001,61261160500,61376006);中国科学院战略性先导科技专项(XDA09020402);国家重点基础研究发展计划(2013CBA01904,2013CBA01900,2010CB934300,2011CBA00607,2011CB932804);国家集成电路重大专项(2009ZX02023-003); 传统的神经形态芯片一般采用SRAM阵列来存储突触权重,掉电后数据会丢失,且只能通过单一地址译码进行存取,不利于突触权重的更新.为此,本文基于40nm先进工艺并结合嵌入式相变存储器设计了一种非易失性突触存储阵列及神经元电路,为神经元...; 关键词：神经元突触非易失性相变存储器人工神经网络

相变存储器材料研究被引量：4: 《中国科学：物理学、力学、天文学》2016年第10期119-127,共9页吴良才宋志棠周夕淋饶峰封松林; 中国科学院战略性先导科技专项(编号:XDA09020402);国家重点基础研究发展计划(编号:2011CBA00607;2011CBA00602);国家自然科学基金(编号:61076121)资助项目; 作为下一代最具竞争力的新型存储技术之一,相变存储技术近十多年来得到突飞猛进的发展,相关产品已经问世并实现量产.伴随着相变存储技术本身的发展,与其相关的基础研究也是近年来信息、材料等相关领域的研究热点.基于硫系化合物材料的...; 关键词：相变存储器 GeSbTe 相变机理 C掺杂

Endurance characteristics of phase change memory cells被引量：1: 《Journal of Semiconductors》2016年第5期65-68,共4页霍如如蔡道林陈邦明陈一峰王玉婵王月青魏宏阳王青夏洋洋高丹宋志棠; Project supported by the Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDA09020402);the National Key Basic Research Program of China(Nos.2013CBA01900,2010CB934300,2011CBA00607,2011CB932804);the National Integrate Circuit Research Program of China(No.2009ZX02023-003);the National Natural Science Foundation of China(No.61176122,61106001,61261160500,61376006);the Science and Technology Council of Shanghai(Nos.12nm0503701,13DZ2295700,12QA1403900,13ZR1447200,14ZR1447500); The endurance characteristics of phase change memory are studied. With operational cycles, the resis- tances of reset and set states gradually change to the opposite direction. What is more, the operational conditions...; 关键词：phase change memory endurance compositional change threshold voltage

DOIND： a technique for leakage reduction in nanoscale domino logic circuits被引量：2: 《Journal of Semiconductors》2016年第5期69-77,共9页Ambika Prasad Shah Vaibhav Neema Shreeniwas Daulatabad; A novel DOIND logic approach is proposed for domino logic, which reduces the leakage current with a minimum delay penalty. Simulation is performed at 70 nm technology node with supply voltage 1V for domino logic and D...; 关键词：deep submicron DOIND logic domino logic EVALUATION precharge subthreshold leakage

超短沟道绝缘层上硅平面场效应晶体管中热载流子注入应力导致的退化对沟道长度的依赖性被引量：1: 《物理学报》2015年第16期384-390,共7页刘畅卢继武吴汪然唐晓雨张睿俞文杰王曦赵毅; 国家重点基础研究发展规划(批准号:2011CBA00607);国家自然科学基金(批准号:61376097);浙江省自然科学基金(批准号:LR14F040001);功能信息材料国家重点实验室开放课题(批准号:SKL201304)资助的课题~~; 随着场效应晶体管(MOSFET)器件尺寸的进一步缩小和器件新结构的引入,学术界和工业界对器件中热载流子注入(hot carrier injections,HCI)所引起的可靠性问题日益关注.本文研究了超短沟道长度(L=30—150 nm)绝缘层上硅(silicon on insulat...; 关键词：绝缘层上硅场效应晶体管热载流子注入沟道长度

High performance trench MOS barrier Schottky diode with high-k gate oxide被引量：2: 《Chinese Physics B》2015年第7期426-428,共3页翟东媛朱俊赵毅蔡银飞施毅郑有炓; Project supported by the National Basic Research Program of China(Grant No.2011CBA00607);the National Natural Science Foundation of China(Grant Nos.61106089 and 61376097);the Zhejiang Provincial Natural Science Foundation of China(Grant No.LR14F040001); A novel trench MOS barrier Schottky diode（TMBS） device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS c...; 关键词：trench MOS barrier Schottky diode high-k gate oxide leakage current

The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory: 《Journal of Semiconductors》2015年第5期181-186,共6页高丹刘波李莹宋志棠任万春李俊焘许震吕士龙朱南飞任佳栋詹奕鹏吴汉明封松林; Project supported by the National Key Basic Research Program of China(Nos.2010CB934300,2013CBA01900,2011CBA00607,2011CB932804);the Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDA09020402);the National Integrate Circuit Research Program of China(No.2009ZX02023-003);the National Natural Science Foundation of China(Nos.61176122,61106001,61261160500,61376006);the Science and Technology Council of Shanghai(Nos.12nm0503701,13DZ2295700,12QA1403900,13ZR 1447200); Phase change memory （PCM） has been regarded as a promising candidate for the next generation of nonvolatile memory. To decrease the power required to reset the PCM cell, titanium nitride （TIN） is preferred to be u...; 关键词：PCM oxygen plasma ashing titanium nitride bottom electrode OXIDATION CMP

A Phase Change Memory Chip Based on Ti Sb Te Alloy in 40-nm Standard CMOS Technology被引量：2: 《Nano-Micro Letters》2015年第2期172-176,共5页Zhitang Song Yi Peng Zhan Daolin Cai Bo Liu Yifeng Chen Jiadong Ren; supported by the‘‘Strategic Priority Research Program’’of the Chinese Academy of Sciences(XDA09020402);National Key Basic Research Program of China(2013CBA01900,2010CB934300,2011CBA00607,2011CB932804);National Integrate Circuit Research Program of China(2009ZX02023-003);National Natural Science Foundation of China(61176122,61106001,61261160500,61376006);Science and Technology Council of Shanghai(12nm0503701,13DZ2295700,12QA1403900,13ZR1447200,14ZR1447500); In this letter, a phase change random access memory(PCRAM) chip based on Ti0.4Sb2Te3 alloy material was fabricated in a 40-nm 4-metal level complementary metal-oxide semiconductor(CMOS) technology. The phase change re...; 关键词：PCRAM Ti0.4Sb2Te3alloy CMOS NMOS

Thermal effect of Ge_2Sb_2Te_5 in phase change memory device: 《Chinese Physics B》2014年第8期121-124,共4页李俊焘刘波宋志棠任堃朱敏徐佳任佳栋冯高明任万春童浩; Project supported by the National Basic Research Program of China(Grant Nos.2010CB934300,2011CBA00607,and 2011CB9328004);the National Integrate Circuit Research Program of China(Grant No.2009ZX02023-003);the National Natural Science Foundation of China(Grant Nos.60906004,60906003,61006087,61076121,61176122,and 61106001);the Funds from the Science and Technology Council of Shanghai,China(Grant No.12nm0503701); In the fabrication of phase change random access memory （PRAM） devices, high temperature thermal processes are inevitable. We investigate the thermal stability of GezSb2Te5 （GST） which is a prototypical phase chan...; 关键词：phase change memory Ge2Sb2Te5 thermal effect failure analysis

Chemical mechanical planarization of Ge_2Sb_2Te_5 using IC1010 and Politex reg pads in acidic slurry被引量：1: 《Chinese Physics B》2014年第8期177-182,共6页何敖东刘波宋志棠王良咏刘卫丽冯高明封松林; Project supported by the National Basic Research Program of China(Grant Nos.2010CB934300,2013CBA01900,2011CBA00607,and 2011CB9328004);the "Strategic Priority Research Program" of the Chinese Academy of Sciences(Grant No.XDA09020402);the Fund from the Science and Technology Council of Shanghai,China(Grant No.13DZ2295700);the Science Fund from the Chinese Academy of Sciences(Grant No.20110490761);the National Natural Science Foundation of China(Grant Nos.61076121,61176122,and 61106001); In the paper, chemical mechanical planarization （CMP） of Ge2 Sb2Te5 （GST） is investigated using IC 1010 and Politex reg pads in acidic slurry. For the CMP with blank wafer, it is found that the removal rate （RR）...; 关键词：Ge2Sb2Te5 CMP polishing pad

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