国家自然科学基金(61274039)

作品数：7被引量：14H指数：2
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相关机构：中山大学德岛大学更多>>
相关期刊：《中国科技论文》《半导体技术》《Chinese Physics B》《Chinese Journal of Electronics》更多>>
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全固态AlGaN/GaN ISFET pH传感器的温度特性被引量：2
《半导体技术》2018年第10期734-739,共6页戴雅琼 黄德佳 邢洁莹 潘郑州 张佰君 
国家重点研发计划资助项目(2016YFB0400100,2017YFB0400301);国家自然科学基金资助项目(61574173,61274039);广东省科技计划项目(2017B010112002)
制备了集成式全固态AlGaN/GaN异质结离子敏感场效应晶体管（ISFET）结构pH传感器,并研究了其温度特性。将惰性金属薄膜作为固态参比电极集成到pH传感器主体上,取代传统的外置玻璃参比电极,实现了对微升溶液pH值的测量。将ISFET pH传感...
关键词：ALGAN/GAN异质结 离子敏感场效应晶体管(ISFET) 全固态 PH传感器 阈值电压 
Current Spreading Effects in Vertical GaN-Based Light-Emitting Diode on Si(111) Substrate被引量：1
《Chinese Journal of Electronics》2016年第4期672-677,共6页WEI Jingting ZHANG Baijun WANG Gang 
supported by Research Program of The Open University of Guangdong(No.1318);the National Natural Science Foundation of China(No.61274039);International Sci.& Tech.Collaboration Program of Guangdong Province,China(No.2013B051000041)
The optimal design of Ga N-based Lightemitting diode(LED) is important for its reliability.In this work,a new three-Dimensional(3D) circuit model with a resistor network is developed to study the current distribution ...
关键词：Light-emitting diodes Current distribution uniformity Circuit model 
Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode
《Chinese Physics B》2015年第9期479-483,共5页钟健 姚尧 郑越 杨帆 倪毅强 贺致远 沈震 周桂林 周德秋 吴志盛 张伯君 刘扬 
Project supported by the National Natural Science Foundation of China(Grant Nos.51177175 and 61274039);the National Basic Research Program of China(Grant Nos.2010CB923200 and 2011CB301903);the Ph.D. Programs Foundation of Ministry of Education of China(Grant No.20110171110021);the International Science and Technology Collaboration Program of China(Grant No.2012DFG52260);the National High Technology Research and Development Program of China(Grant No.2014AA032606);the Science and Technology Plan of Guangdong Province,China(Grant No.2013B010401013);the Opened Fund of the State Key Laboratory on Integrated Optoelectronics,China(Grant No.IOSKL2014KF17)
The influences of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with ICPrecessed anode was investigated for the first time. It was found that the turn-on voltage is decreased w...
关键词：AlGaN/GaN Schottky barrier diodes recessed anode etching damage TUNNELING 
Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate
《Chinese Physics B》2015年第5期529-534,共6页倪毅强 贺致远 姚尧 杨帆 周德秋 周桂林 沈震 钟健 郑越 张佰君 刘扬 
supported by the National Natural Science Foundation of China(Grant Nos.51177175 and 61274039);the National Basic Research Project of China(Grant Nos.2010CB923200 and 2011CB301903);the Ph.D.Program Foundation of Ministry of Education of China(Grant No.20110171110021);the International Sci.&Tech.Collaboration Program of China(Grant No.2012DFG52260);the National High-tech R&D Program of China(Grant No.2014AA032606);the Science and Technology Plan of Guangdong Province,China(Grant No.2013B010401013);the Opened Fund of the State Key Laboratory on Integrated Optoelectronics(Grant No.IOSKL2014KF17)
We report a novel structure of A1GaN/GaN heterostructure field effect transistors （HFETs） with a Si and Mg pair- doped interlayer grown on Si substrate. By optimizing the doping concentrations of the pair-doped inte...
关键词：heterostructure field effect transistor （HFET） GaN on Si INTERLAYERS high on/off ratio 
增强型GaN MOSFET的制备及其绝缘栅的电荷特性研究
《中国科技论文》2015年第4期420-423,共4页周桂林 张金城 沈震 杨帆 姚尧 钟健 郑越 张佰君 敖金平 刘扬 
国家自然科学基金资助项目(51177175,61274039);国家重点基础研究发展计划(973计划)资助项目(2010CB923200,2011CB301903);高等学校博士学科点专项科研基金资助项目(20110171110021);国家国际科技合作专项资助项目(2012DFG52260);国家高技术研究发展计划(863计划)资助项目(2014AA032606)
采用ICP干法刻蚀和PECVD沉积技术,制备了增强型Si衬底SiO2/GaN MOS栅场效应晶体管(MOSFET)。SiO2/GaN MOSFET转移特性曲线测试中出现阈值电压不稳定现象,针对其阈值电压稳定性问题,采用正向电压偏置方法对SiO2/GaN MOSFET的绝缘栅电荷...
关键词：氮化镓 二氧化硅 场效应管 等离子增强化学气相沉积 陷阱 正向偏压 
表面态对AlGaN／GaN异质结构2DEG影响的模拟分析
《中国科技论文》2014年第10期1206-1208,共3页杨帆 林哲雄 张炜 张金城 王硕 贺致远 倪毅强 刘扬 
国家自然科学基金资助项目(51177175,61274039);国家重点基础研究发展计划(973计划)资助项目(2010CB923200,2011CB301903);高等学校博士学科点专项科研基金资助项目(20110171110021);国家国际科技合作专项项目(2012DFG52260);国家高技术研究发展计划(863计划)资助项目(2011AA03A101)
利用模拟软件研究施主表面态特性与AlGaN/GaN异质结构中二维电子气(2dimensional electron gas,2DEG)形成之间的关系,分析施主表面态电离过程以及表面态能级位置、表面态密度的影响。结果表明:施主表面态为2DEG的电子来源;AlGaN能带分布...
关键词：半导体物理学 施主表面态 AlGaN厚度 表面态电离 模拟 
A review of GaN-based optoelectronic devices on silicon substrate被引量：11
《Chinese Science Bulletin》2014年第12期1251-1275,共25页Baijun Zhang Yang Liu 
supported by the National Basic Research Program of China (2010CB923200 and 2011CB301903);the National High Technology Research and Development Program of China (2011AA03A101);the National Natural Science Foundation of China (61274039 and 51177175);Ph.D. Programs Foundation of Ministry of Education of China (20110171110021);the Foundation of the Key Technologies R&D Program of Guangdong Province (2010A081002005)
Group Ⅲ-nitride material system possesses some unique properties,such as large spectrum coverage from infrared to deep ultraviolet,wide energy band gap,high electron saturation velocity,high electrical breakdown fiel...
关键词：光电子器件 硅衬底 GAN 综述 材料系统 材料生长 发光二极管 远紫外线 
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