云南高校图书馆联盟文献共享服务平台- PECVD

PECVD: 作品数：718被引量：1141H指数：13; 导出分析报告; 相关领域：电子电信理学更多>>; 相关作者：陈强杭凌侠张冬洪克超徐宝利更多>>; 相关机构：中国科学院湖南红太阳光电科技有限公司北京印刷学院电子科技大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划国家教育部博士点基金更多>>

Thermal conductivity of PECVD silicon-rich silicon nitride films measured with a SiO_2/Si_xN_y bimaterial microbridge test structure: 《Journal of Semiconductors》2014年第4期165-168,共4页韩建强李琰李森林李青; supported by the National Natural Science Foundation of China(No.61076110);the Zhejiang Key Discipline of Instrument Science and Technology(No.JL130101); In order to balance the compressive stress of a silicon dioxide film and compose a steady MEMS structure, a silicon-rich silicon nitride film with tensile stress is deposited by plasma enhanced chemical vapor depositi...; 关键词：MEMS silicon nitride film thermal conductivity bimaterial microbridge

Simultaneous quality improvement of the roughness and refractive index of SiC thin films: 《Journal of Semiconductors》2012年第6期6-9,共4页Gh.Sareminia H.Simchi A.Ostovari L.Lavasanpour; We deposite silicon carbide thin layers on cleaned Si（100） substrates using the plasma enhanced chemical vapor deposition method,and show that the RFTIR spectrum is periodic in the near and medium infrared ranges. I...; 关键词：SiC PECVD RFTIR thickness measurement refractive index

Influence of the initial transient state of plasma and hydrogen pre-treatment on the interface properties of a silicon heterojunction fabricated by PECVD被引量：2: 《Journal of Semiconductors》2011年第9期147-150,共4页武春波周玉琴李国荣刘丰珍; Project supported by the National Key Basic Research Program of China(No.2011CBA00705);the Knowledge Innovation Project of the Chinese Academy of Sciences(No.KGCX2-YW-351).; Amorphous/crystalline silicon heterojunctions（a-Si：H/c-Si SHJ） were prepared by plasma-enhanced chemical vapor deposition（PECVD）.The influence of the initial transient state of the plasma and the hydrogen pre-tre...; 关键词：silicon heterojunction PECVD interface properties initial transient state of plasma hydrogen plasma pre-treatment

Annealing optimization of hydrogenated amorphous silicon suboxide film for solar cell application被引量：1: 《Journal of Semiconductors》2011年第5期7-9,共3页贾广智刘洪刚常虎东; We investigate a passivation scheme using hydrogenated amorphous silicon suboxide （a-SiOx ：H） film for industrial solar cell application. The a-SiOx ：H films were deposited using plasma-enhanced chemical vapor dep...; 关键词：a-SiOx H thermal annealing PECVD

Dependence of wet etch rate on deposition,annealing conditions and etchants for PECVD silicon nitride film被引量：1: 《Journal of Semiconductors》2009年第9期151-154,共4页唐龙娟朱银芳杨晋玲李艳周威解婧刘云飞杨富华; Project supported by the National High Technology Research and Development Program of China (No.2007AA04Z322);the State Key Development Program for Basic Research of China (No.2009CB320305);the Hundred Talents Plan of Chinese Academy of Sciences; The influence of deposition, annealing conditions, and etchants on the wet etch rate of plasma enhanced chemical vapor deposition （PECVD） silicon nitride thin film is studied. The deposition source gas flow rate and...; 关键词：plasma enhanced chemical vapor deposition silicon nitride HF solution etch rate

Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell被引量：1: 《Journal of Semiconductors》2009年第6期25-28,共4页石明吉王占国刘石勇彭文博肖海波张长沙曾湘波; supported by the State Key Development Program for Basic Research of China(No.2006CB202604);the National Natural Science Foundation of China (No. 60576036);the National High Technology Research and Development Program of China (No. 2006AA05Z405); Boron-doped hydrogenated silicon films with different gaseous doping ratios（B2H6/SiH4） were deposited in a plasma-enhanced chemical vapor deposition（PECVD） system.The microstructure of the films was investigated b...; 关键词：PECVD BORON-DOPING tunnel junction recombination rate RECTIFICATION

Influence of Atomic Hydrogen on Transparent Conducting Oxide During Hydrogenated Microcrystalline Si Preparation by PECVD: 《Journal of Semiconductors》2007年第7期1005-1008,共4页陈永生汪建华卢景霄杨根郜小勇杨仕娥; 国家重点基础研究发展规划资助项目(批准号:2006CB202601)~~; The hydrogen plasma degradation of transparent conduction oxides （TCO） is studied for hydrogenated microcrystalline Si（μc-Si：H）prepared by plasma enhanced chemical vapor deposition （PECVD）. TCO films such as S...; 关键词：TCO hydrogenated microcrystalline silicon hydrogen plasma degradation

纳米硅层状薄膜及其p-i-n太阳能电池的研制被引量：1: 《Journal of Semiconductors》2007年第z1期333-336,共4页金飞张维佳贾士亮丁照崇闫兰琴王天民李国华; 通过等离子体增强化学气相沉积(PECVD)法分别制备了本征、掺磷和掺硼的氢化纳米硅薄膜(nc-Si:H),并制备出纳米硅复合层状薄膜.对薄膜样品进行了喇曼(Raman)散射谱,X射线衍射等分析测试.结果表明:掺杂元素对纳米硅薄膜的晶态比和晶粒大...; 关键词：PECVD 太阳能电池半导体薄膜

PECVD SiC材料刻蚀技术: 《Journal of Semiconductors》2006年第z1期381-384,共4页陈晟李志宏张国炳郭辉王煜田大宇; 北京市自然科学基金资助项目(批准号:4052017); 通过对PECVD SiC进行不同条件下的反应离子刻蚀(RIE)和电感耦合反应离子刻蚀(ICP)实验研究,提出了使用SF6和He的混合气体进行RIE刻蚀,并讨论了功率和压强分别对刻蚀速率的影响.进一步研究了SiC中H含量对于RIE刻蚀速率的影响,同时验证IC...; 关键词：PECVD 碳化硅反应离子刻蚀电感耦合离子刻蚀氢含量功率

RF-PECVD高速沉积优质过渡区微晶硅薄膜被引量：1: 《Journal of Semiconductors》2005年第z1期98-101,共4页周炳卿朱美芳刘丰珍刘金龙谷锦华张群芳李国华丁琨; 国家重点基础研究发展规划资助项目(批准号:G2000028208); 利用13.56MHz射频等离子体增强化学气相沉积技术高速沉积非晶/微晶过渡区的微晶硅(μc-Si:H)薄膜.研究了沉积压力、射频功率、电极间距、氢稀释度等参数对沉积速率、电学性质等的影响.选择优化的沉积参数,在非晶到微晶的过渡区得到了沉...; 关键词：微晶硅薄膜 PECVD 高速沉积

PECVD